News

We are pleased to announce that our paper on achieving transistor operation using sol–gel–derived BaSnO₃ oxide semiconductor films has been published in Nano Express. Sol–gel films offer the advantage of facile solution-based film fabrication; however, they generally exhibit a high density of defects, which has made it difficult to achieve proper transistor operation. In this work, we demonstrate that thinning the sol–gel film down to the nanoscale enables stable and appropriate device operation.

The first author of this work is our alumnus, Mr. Maeyama. You can read the paper at the following link:

https://doi.org/10.1088/2632-959X/ae4b5c