News

Sep 8, 2025

Invited Talk at the Japan Society of Applied Physics (JSAP)

We were honored to give an invited talk on water-induced operational instabilities in two-dimensional semiconductor transistors at a symposium of the Japan Society of Applied Physics (JSAP).

The 86th JSAP Autumn Meeting, Presentation No. 8p-S102-6, September 7–10, 2025, Meijo University, Tempaku Campus, Nagoya, Japan.

Related Publications

  • Hiroki Kii and Ryo Nouchi*: "Drain-Induced Threshold-Voltage Shift Greater than 90 V/V in Molecule-Decorated MoS2 Field-Effect Transistors Operated in Air" ACS Appl. Electron. Mater. 7 (2025) 5282-5289.
  • Yuto Hamahiga and Ryo Nouchi*: "Effects of source/drain electrode thickness on water-induced instability of laminated organic single-crystal field-effect transistors" Org. Electron. 121 (2023) 106866.
  • Ryo Nouchi*, Yoshiaki Ishihara, and Susumu Ikeda: "Water permeation pathway in laminated organic single crystal devices" AIP Adv. 10 (2020) 075312.
  • Ryo Nouchi*: "Dipolar Switching of Charge-Injection Barriers at Electrode/Semiconductor Interfaces as a Mechanism for Water-Induced Instabilities of Organic Devices" Adv. Mater. Interfaces 5 (2018) 1801261.