実績

2025年

■ Shimamoto K. , Hayama T. , Yoshimura T. , Fujimura N., Composition control of YbFe2O4 electronic ferroelectric thin films with PLD growth process monitoring, APL Materials, 2025, 13, 3, DOI: 10.1063/5.0259898
■ Yamamoto S. , Kiuch M. , Yoshimura T., Neuromorphic Piezomems Sensor Using Epitaxial BiFeO3 Thin Film, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 2025,  DOI: 10.1109/MEMS61431.2025.10918020

2024年

■ Nishimura K. , Fujimura N. , Yoshimura T., Neuromorphic alternating current sensing using piezoelectric resonators and physical reservoir computing, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2024, 63, 9, DOI: 10.35848/1347-4065/ad73e1
■ Nakamoto T. , Matsuyama K. , Sakai M. , Chen C.-T. , Cheuch Y.-L. , Mouri S. , Yoshimura T. , Fujimura N. , Kiriya D., Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation, ACS Nano, 2024, 18, 3, DOI: 10.1021/acsnano.3c11099
■ Islam M.E. , Shimamoto K. , Yoshimura T. , Fujimura N., Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD, AIP Advances, 2024, 14, 4, DOI: 10.1063/5.0189793
■ Aphayvong S. , Takaki K. , Fujimura N. , Yoshimura T., Enhancement of the piezoelectric properties of (100) BiFeO3 films on Si by all-sputtered epitaxial growth, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2024, 63, 9, DOI: 10.35848/1347-4065/ad6d74

2023年

■ Nakahara T. , Kobayashi T. , Dohi T. , Yoshimura T. , Fujimura N. , Kiriya D., Spontaneous Crystal Fluctuation in Hydrocarbon Polymer-Coated Monolayer MoS2, MoSe2, WS2, and WSe2 with Strong Photoluminescence Enhancement, ACS Photonics, 2023, 10, 10, DOI: 10.1021/acsphotonics.3c00670
■ Fukui A. , Matsuyama K. , Onoe H. , Itai S. , Ikeno H. , Hiraoka S. , Hiura K. , Hijikata Y. , Pirillo J. , Nagata T. , Takei K. , Yoshimura T. , Fujimura N. , Kiriya D., Unusual Selective Monitoring of N,N-Dimethylformamide in a Two-Dimensional Material Field-Effect Transistor, ACS Nano, 2023, 17, 15, DOI: 10.1021/acsnano.3c03915
■ Islam M.E. , Shimamoto K. , Yoshimura T. , Fujimura N., Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique, AIP Advances, 2023, 13, 11, DOI: 10.1063/5.0178100
■ Naito K. , Yamaguchi K. , Yoshimura T. , Fujimura N., The ferroelectric orthorhombic phase formation of Hf0.5Zr0.5O2thin films on (-201) β-Ga2O3substrate by atomic layer deposition, Japanese Journal of Applied Physics, 2023, 62, SM, DOI: 10.35848/1347-4065/ace917
■ Yoshimura T. , Haga T. , Fujimura N. , Kanda K. , Kanno I., Efficient Reservoir Computing by Nonlinearly Coupled Piezoelectric MEMS Resonators, 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023
■ Yoshimura T. , Haga T. , Fujimura N. , Kanda K. , Kanno I., Piezoelectric MEMS-based physical reservoir computing system without time-delayed feedback, Japanese Journal of Applied Physics, 2023, 62, SM, DOI: 10.35848/1347-4065/ace6ab

2022年

■ Fukui A. , Aoki Y. , Matsuyama K. , Ichimiya H. , Nouchi R. , Takei K. , Ashida A. , Yoshimura T. , Fujimura N. , Kiriya D., Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique, Nanotechnology, 2022, 33, 7, DOI: 10.1088/1361-6528/ac3615
■ Matsuyama K. , Aoki R. , Miura K. , Fukui A. , Togawa Y. , Yoshimura T. , Fujimura N. , Kiriya D., Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping, ACS Applied Materials and Interfaces, 2022, 14, 6, DOI: 10.1021/acsami.1c22156
■ Kimura D. , Yotsuya S. , Yoshimura T. , Fujimura N. , Kiriya D., Strong Photoluminescence Enhancement in Molybdenum Disulfide in Aqueous Media, Langmuir, 2022, 38, 43, DOI: 10.1021/acs.langmuir.2c01601
■ Aphayvong S. , Murakami S. , Kanda K. , Fujimura N. , Yoshimura T., Enhanced performance on piezoelectric MEMS vibration energy harvester by dynamic magnifier under impulsive force, Applied Physics Letters, 2022, 121, 17, DOI: 10.1063/5.0116838

2021年

■ Yamada Y. , Yoshimura T. , Ashida A. , Fujimura N. , Kiriya D., Strong photoluminescence enhancement from bilayer molybdenum disulfide via the combination of uv irradiation and superacid molecular treatment, Applied Sciences (Switzerland), 2021, 11, 8, DOI: 10.3390/app11083530
■ Kiriya D. , Fujimura N., Functional hybridization of molecules with 2D semiconducting materials , [原子層半導体と分子性化合物の融合機能化†], Zairyo/Journal of the Society of Materials Science, Japan, 2021, 70, 10, DOI: 10.2472/jsms.70.721
■ Miura K. , Kiriya D. , Yoshimura T. , Fujimura N., Correlation between photoluminescence and antiferromagnetic spin order in strongly correlated YMnO3 ferroelectric epitaxial thin film, AIP Advances, 2021, 11, 7, DOI: 10.1063/5.0055052
■ Yamada Y. , Zhang Y. , Ikeno H. , Shinokita K. , Yoshimura T. , Ashida A. , Fujimura N. , Matsuda K. , Kiriya D., Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation, ACS Applied Materials and Interfaces , 2021, 13, 21, DOI: 10.1021/acsami.1c04980
■ Takada K. , Murase M. , Migita S. , Morita Y. , Ota H. , Fujimura N. , Yoshimura T., Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response, Applied Physics Letters, 2021, 119, 3, DOI: 10.1063/5.0047104
■ Takada K. , Takarae S. , Shimamoto K. , Fujimura N. , Yoshimura T., Time-Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films, Advanced Electronic Materials, 2021, 7, 8, DOI: 10.1002/aelm.202100151

2020年

■ Suzuki K. , Nakayama Y. , Shimizu N. , Mizuno T. , Mita Y. , Yoshimura T., Supersensitive Ultrasound Probes for Medical Imaging by Piezoelectric MEMS with Complemented Transmitting and Receiving Transducers, IEEE International Ultrasonics Symposium, IUS, 2020, 2020-September, , DOI: 10.1109/IUS46767.2020.9251511
■ Aphayvong S. , Yoshimura T. , Murakami S. , Kanda K. , Fujimura N., Investigation of efficient piezoelectric energy harvesting from impulsive force, Japanese Journal of Applied Physics, 2020, 59, SP, DOI: 10.35848/1347-4065/abad16
■ Fujimura N. , Kuroiwa Y. , Cho Y. , Iwata M. , Kakimoto K.-I. , Kanno I. , Kato K. , Kimura M. , Kojima S. , Nagata H. , Shimizu M. , Tsurumi T., Ferroelectric Materials and Their Applications, Japanese Journal of Applied Physics, 2020, 59, , DOI: 10.35848/1347-4065/abb457
■ Shimamoto K. , Tanaka J. , Miura K. , Kiriya D. , Yoshimura T. , Fujimura N., Change in the defect structure of composition controlled single-phase YbFe2O4epitaxial thin films, Japanese Journal of Applied Physics, 2020, 59, SP, DOI: 10.35848/1347-4065/aba9b2
■ Matsushita Y. , Yoshimura T. , Kiriya D. , Fujimura N., Investigation of the electrocaloric effect in ferroelectric polymer film through direct measurement under alternating electric field, Applied Physics Express, 2020, 13, 4, DOI: 10.35848/1882-0786/ab8053
■ Murase M. , Yoshimura T. , Fujimura N., Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3films, Japanese Journal of Applied Physics, 2020, 59, SP, DOI: 10.35848/1347-4065/abb4c0
■ Fujimura N. , Yoshimura T., Novel Ferroelectric Gate Field-Effect Transistors (FeFETs) , Controlled Polarization-Type FeFETs, Topics in Applied Physics, 2020, 131, , DOI: 10.1007/978-981-15-1212-4_8
■ Yamada Y. , Shinokita K. , Okajima Y. , Takeda S.N. , Matsushita Y. , Takei K. , Yoshimura T. , Ashida A. , Fujimura N. , Matsuda K. , Kiriya D., Photoactivation of Strong Photoluminescence in Superacid-Treated Monolayer Molybdenum Disulfide, ACS Applied Materials and Interfaces, 2020, 12, 32, DOI: 10.1021/acsami.0c09084
■ Nunokawa T. , Fujiwara Y. , Miyata Y. , Fujimura N. , Sakurai T. , Ohta H. , Masago A. , Shinya H. , Fukushima T. , Sato K. , Katayama-Yoshida H., Valence states and the magnetism of Eu ions in Eu-doped GaN, Journal of Applied Physics, 2020, 127, 8, DOI: 10.1063/1.5135743

2019年

■ Aramaki M. , Yoshimura T. , Murakami S. , Satoh K. , Fujimura N., Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO3 film with improved electromechanical coupling factor, Sensors and Actuators, A: Physical, 2019, 291, , DOI: 10.1016/j.sna.2019.03.050
■ Kariya K. , Yoshimura T. , Ujimoto K. , Fujimura N., Quantitative analysis of the direct piezoelectric response of bismuth ferrite films by scanning probe microscopy, Scientific Reports, 2019, 9, 1, DOI: 10.1038/s41598-019-56261-w
■ Aramaki M. , Yoshimura T. , Murakami S. , Kanda K. , Fujimura N., Electromechanical characteristics of piezoelectric vibration energy harvester with 2-degree-of-freedom system, Applied Physics Letters, 2019, 114, 13, DOI: 10.1063/1.5093956
■ Yoshimura T. , Izumi K. , Ueno Y. , Minami T. , Murakami S. , Fujimura N., Piezoelectric energy harvesting from AC current-carrying wire, Japanese Journal of Applied Physics, 2019, 58, SL, DOI: 10.7567/1347-4065/ab3e57
■ Takada K. , Saho Y. , Yoshimura T. , Fujimura N., The effects of small amounts of oxygen during deposition on structural changes in sputtered HfO2-based films, Japanese Journal of Applied Physics, 2019, 58, SL, DOI: 10.7567/1347-4065/ab37cb
■ Miura K. , Kiriya D. , Yoshimura T. , Ashida A. , Fujimura N.,  Fabrication and Characterization of (Ba,La)SnO3 Semiconducting Epitaxial Films on (111) and (001) SrTiO3 Substrates, Physica Status Solidi (A) Applications and Materials Science, 2019, 216, 5, DOI: 10.1002/pssa.201700800
■ Choi J.H. , Yoshimura T. , Fujimura N. , Cheon C.I., Saturated and Pinched Ferroelectric Hysteresis Loops in BiFeO3 Ceramics, Journal of the Korean Physical Society, 2019, 74, 3, DOI: 10.3938/jkps.74.269
■ Takada K. , Yoshimura T. , Fujimura N., Time-resolved simulation of the negative capacitance stage emerging at the ferroelectric/semiconductor hetero-junction, AIP Advances, 2019, 9, 2, DOI: 10.1063/1.5075516
■ Ichimiya H. , Takinoue M. , Fukui A. , Yoshimura T. , Ashida A. , Fujimura N. , Kiriya D., Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of Donor Molecules, ACS Applied Materials and Interfaces, 2019, 11, 17, DOI: 10.1021/acsami.9b03367
■ Matsuyama K. , Fukui A. , Miura K. , Ichimiya H. , Aoki Y. , Yamada Y. , Ashida A. , Yoshimura T. , Fujimura N. , Kiriya D., Convection-Flow-Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface-Charge Transfer Doping of Molybdenum Disulfide, ChemistryOpen, 2019, 8, 7, DOI: 10.1002/open.201900169
■ Ichimiya H. , Fukui A. , Aoki Y. , Yamada Y. , Yoshimura T. , Ashida A. , Fujimura N. , Kiriya D., Solvent engineering for strong photoluminescence enhancement of monolayer molybdenum disulfide in redox-active molecular treatment, Applied Physics Express, 2019, 12, 5, DOI: 10.7567/1882-0786/ab1544
■ Fujimura N., Ferroelectric Materials and Their Applications, Japanese Journal of Applied Physics, 2019, 58, SL, DOI: 10.7567/1347-4065/ab4583
■ Murakami S. , Yoshimura T. , Aramaki M. , Kanaoka Y. , Tsuda K. , Satoh K. , Kanda K. , Fujimura N., Output Power of Piezoelectric MEMS Vibration Energy Harvesters under Random Oscillation, Journal of Physics: Conference Series, 2019, 1407, 1, DOI: 10.1088/1742-6596/1407/1/012082
■ Tanaka J. , Miura K. , Kiriya D. , Yoshimura T. , Ashida A. , Fujimura N., Fabrication of chemical composition controlled YbFe2O4 epitaxial thin films, Japanese Journal of Applied Physics, 2019, 58, SL, DOI: 10.7567/1347-4065/ab3959
■ Suzuki K. , Nakayama Y. , Kanagawa I. , Matsushita Y. , Mizuno T. , Mita Y. , Yoshimura T., Monolithic Integration of P(VDF-TrFE) Thin Film on CMOS for Wide-band Ultrasonic Transducer Arrays, IEEE International Ultrasonics Symposium, IUS, 2019, 2019-October, , DOI: 10.1109/ULTSYM.2019.8926015
■ Yoshimura T., Microenergy harvesting using BiFeO3 films, Nanoscale Ferroelectric-Multiferroic Materials for Energy Harvesting Applications, 2019, DOI: 10.1016/B978-0-12-814499-2.00011-6

2018年

■ Matsushita Y. , Kanagawa I. , Yoshimura T. , Fujimura N., Direct piezoelectric response in vinylidene fluoride-trifluoroethylene copolymer films, Japanese Journal of Applied Physics, 2018, 57, 11, DOI: 10.7567/JJAP.57.11UG01
■ Fujimura N., Ferroelectric Materials and Their Applications, Japanese Journal of Applied Physics, 2018, 57, 11, DOI: 10.7567/JJAP.57.11U001
■ Yoshimura T. , Kariya K. , Okamoto N. , Aramaki M. , Fujimura N., Direct piezoelectric properties of BiFeO3 epitaxial films grown by combinatorial sputtering, Journal of Physics: Conference Series, 2018, 1052, 1, DOI: 10.1088/1742-6596/1052/1/012020
■ Kamada D. , Takada K. , Yoshimura T. , Fujimura N., Fabrication of Y doped HfO2 epitaxial films directly on (001) si substrate, Zairyo/Journal of the Society of Materials Science, Japan, 2018, 67, 9, DOI: 10.2472/jsms.67.848
■ Fukui A. , Miura K. , Ichimiya H. , Tsurusaki A. , Kariya K. , Yoshimura T. , Ashida A. , Fujimura N. , Kiriya D., Reaction of N,N'-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide, AIP Advances, 2018, 8, 5, DOI: 10.1063/1.5029315
■ Kakihara R. , Kariya K. , Matsushita Y. , Yoshimura T. , Fujimura N., Investigation of piezoelectric energy harvesting from human walking, Journal of Physics: Conference Series, 2018, 1052, 1, DOI: 10.1088/1742-6596/1052/1/012113
■ Aramaki M. , Izumi K. , Yoshimura T. , Murakami S. , Satoh K. , Kanda K. , Fujimura N., Investigation of mechanical nonlinear effect in piezoelectric MEMS vibration energy harvesters, Japanese Journal of Applied Physics, 2018, 57, 11, DOI: 10.7567/JJAP.57.11UD03
■ Murakami S. , Yoshimura T. , Kanaoka Y. , Tsuda K. , Satoh K. , Kanda K. , Fujimura N., Characterization of piezoelectric MEMS vibration energy harvesters using random vibration, Japanese Journal of Applied Physics, 2018, 57, 11, DOI: 10.7567/JJAP.57.11UD10
■ Kiriya D. , Hijikata Y. , Pirillo J. , Kitaura R. , Murai A. , Ashida A. , Yoshimura T. , Fujimura N., Systematic Study of Photoluminescence Enhancement in Monolayer Molybdenum Disulfide by Acid Treatment, Langmuir, 2018, 34, 35, DOI: 10.1021/acs.langmuir.8b01425
■ Ichimiya H. , Takinoue M. , Fukui A. , Miura K. , Yoshimura T. , Ashida A. , Fujimura N. , Kiriya D., Tuning Transition-Metal Dichalcogenide Field- Effect Transistors by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film, ACS Nano, 2018, 12, 10, DOI: 10.1021/acsnano.8b04914
■ Okamoto N. , Kariya K. , Yoshimura T. , Fujimura N., The effect of crystal distortion and domain structure on piezoelectric properties of BiFeO3 thin films, Japanese Journal of Applied Physics, 2018, 57, 11, DOI: 10.7567/JJAP.57.11UF07

2017年

■ Miura K. , Zhang L. , Kiriya D. , Ashida A. , Yoshimura T. , Fujimura N., Origin of the photoinduced current of strongly correlated YMnO3 ferroelectric epitaxial films, Japanese Journal of Applied Physics, 2017, 56, 10, DOI: 10.7567/JJAP.56.10PB08
■ Baniecki J.D. , Yamazaki T. , Ricinschi D. , Van Overmeere Q. , Aso H. , Miyata Y. , Yamada H. , Fujimura N. , Maran R. , Anazawa T. , Valanoor N. , Imanaka Y., Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3, Scientific Reports, 2017, 7, , DOI: 10.1038/srep41725
■ Izumi H. , Yoshimura T. , Fujimura N., Growth and ferroelectric properties of La and Al codoped BiFeO3 epitaxial films, Journal of Applied Physics, 2017, 121, 17, DOI: 10.1063/1.4982909
■ Nakamura T. , Nagata T. , Hayakawa R. , Yoshimura T. , Oh S. , Hiroshiba N. , Chikyow T. , Fujimura N. , Wakayama Y., Crystallographic polarity effect of ZnO on thin film growth of pentacene, Japanese Journal of Applied Physics, 2017, 56, 4, DOI: 10.7567/JJAP.56.04CJ03
■ Kuroiwa Y. , Ando A. , Cho Y. , Fujimura N. , Iwata M. , Kakimoto K.-I. , Kato K. , Nagata H. , Shimizu M. , Tsurumi T., Foreword ferroelectric materials and their applications, Japanese Journal of Applied Physics, 2017, 56, 10, DOI: 10.7567/JJAP.56.10P001
■ Nagata T. , Nakamura T. , Hayakawa R. , Yoshimura T. , Oh S. , Hiroshiba N. , Chikyow T. , Fujimura N. , Wakayama Y., Photoelectron spectroscopic study on monolayer pentacene thin-film/polar ZnO single-crystal hybrid interface, Applied Physics Express, 2017, 10, 2, DOI: 10.7567/APEX.10.025702
■ Ashida A. , Sato S. , Yoshimura T. , Fujimura N., Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition, Journal of Crystal Growth, 2017, 468, , DOI: 10.1016/j.jcrysgro.2016.11.023
■ Hasegawa T. , Fujimura N. , Nakayama M., Ultrafast dynamics of coherent optical phonon correlated with the antiferromagnetic transition in a hexagonal YMnO3 epitaxial film, Applied Physics Letters, 2017, 111, 19, DOI: 10.1063/1.5003269
■ Takada Y. , Tamano R. , Okamoto N. , Saito T. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A., Fabrication and electrical properties of a (Pb,La)(Zr,Ti)O3 capacitor with pulsed laser deposited Sn-doped In2O3 bottom electrode on Al2O3(0001), Japanese Journal of Applied Physics, 2017, 56, 7, DOI: 10.7567/JJAP.56.07KC02
■ Miyata Y. , Ueno K. , Yoshimura T. , Ashida A. , Fujimura N., Cerium ion doping into self-assembled Ge using three-dimensional dot structure, Journal of Crystal Growth, 2017, 468, , DOI: 10.1016/j.jcrysgro.2016.11.055
■ Aramaki M. , Izumi K. , Yoshimura T. , Murakami S. , Fujimura N., High efficiency piezoelectric MEMS vibrational energy harvsters using (100) oriented BIFEO3 films, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 2017, , , DOI: 10.1109/MEMSYS.2017.7863536
■ Eltanany A.M. , Yoshimura T. , Fujimura N. , Ebied M.R. , Ali M.G.S., Development of piezoelectric bistable energy harvester based on buckled beam with axially constrained end condition for human motion, Japanese Journal of Applied Physics, 2017, 56, 10, DOI: 10.7567/JJAP.56.10PD02

2016年

■ Miyata Y. , Ueno K. , Togawa Y. , Yoshimura T. , Ashida A. , Fujimura N., Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films, Applied Physics Letters, 2016, 109, 11, DOI: 10.1063/1.4962393
■ Takada Y. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Shishido R., Reliability of the Properties of (Pb,La)(Zr,Ti)O3 Capacitors with Non-noble Metal Oxide Electrodes stored in an H2 Atmosphere, MRS Advances, 2016, 1, 5, DOI: 10.1557/adv.2016.139
■ Matsushita Y. , Nochida A. , Yoshimura T. , Fujimura N., Direct measurements of electrocaloric effect in ferroelectrics using thin-film thermocouples, Japanese Journal of Applied Physics, 2016, 55, 10, DOI: 10.7567/JJAP.55.10TB04
■ Tamano R. , Takada Y. , Okamoto N. , Saito T. , Higuchi K. , Kitajima A. , Yoshimura T. , Fujimura N., Comparative study of ferroelectric (K,Na)NbO3 thin films pulsed laser deposition on platinum substrates with different orientation, 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016, 2016, , , DOI: 10.1109/ISAF.2016.7578063
■ Miura K. , Kashimoto R. , Yoshimura T. , Ashida A. , Fujimura N., Fabrication of (Ba,La)SnO3 films on (111)SrTiO3 substrate, Zairyo/Journal of the Society of Materials Science, Japan, 2016, 65, 9, DOI: 10.2472/jsms.65.638
■ Nose Y. , Yoshimura T. , Ashida A. , Uehara T. , Fujimura N., Novel chemical vapor deposition process of ZnO films using nonequilibrium N2 plasma generated near atmospheric pressure with small amount of O2 below 1%, Journal of Applied Physics, 2016, 119, 17, DOI: 10.1063/1.4948326
■ Miyata Y. , Yoshimura T. , Ashida A. , Fujimura N., Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride-trifluoroethylene), as a gate dielectric, Japanese Journal of Applied Physics, 2016, 55, 4, DOI: 10.7567/JJAP.55.04EE04
■ Choi J.H. , Yoshimura T. , Fujimura N., Effects of (Bi1/2,Na1/2)TiO3 on the electrical properties of BiFeO3-based thin films, Japanese Journal of Applied Physics, 2016, 55, 10, DOI: 10.7567/JJAP.55.10TA17
■ Kashimoto R. , Yoshimura T. , Ashida A. , Fujimura N., Lowering the growth temperature of strongly-correlated YbFe2O4 thin films prepared by pulsed laser deposition, Thin Solid Films, 2016, 614, , DOI: 10.1016/j.tsf.2016.04.044
■ Takada Y. , Okamoto N. , Saito T. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Shishido R., Comparative Study of Hydrogen-and Deuterium-Induced Degradation of Ferroelectric (Pb,La)(Zr,Ti)O3 Capacitors Using Time-of-Flight Secondary Ion Measurement, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2016, 63, 10, DOI: 10.1109/TUFFC.2016.2593585
■ Takada Y. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A., Al: ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb, La)(Zr,Ti)O3 capacitors, Electronics Letters, 2016, 52, 3, DOI: 10.1049/e1.2015.3539
■ Nose Y. , Yoshimura T. , Ashida A. , Uehara T. , Fujimura N., Low temperature formation of highly resistive ZnO films using nonequilibrium N2/O2 plasma generated near atmospheric pressure, Thin Solid Films, 2016, 616, , DOI: 10.1016/j.tsf.2016.09.009
■ Aramaki M. , Kariya K. , Yoshimura T. , Murakami S. , Fujimura N., Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system, Japanese Journal of Applied Physics, 2016, 55, 10, DOI: 10.7567/JJAP.55.10TA16
■ Fujimura N. , Yoshimura T., Novel ferroelectric-gate field-effect thin film transistors (FeTFTs): Controlled polarization-type FeTFTs, Topics in Applied Physics, 2016, 131, , DOI: 10.1007/978-94-024-0841-6_6
■ Tamano R. , Amano T. , Takada Y. , Okamoto N. , Saito T. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A., Fabrication of doped Pb(Zr,Ti)O3 capacitors on Pt substrates with different orientations, Electronics Letters, 2016, 52, 16, DOI: 10.1049/el.2016.1949
■ Takada Y. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A., Al:ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors, Electronics Letters, 2016, 52, 3, DOI: 10.1049/EL.2015.3539
■ Takada Y. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A., Ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors employing Al-doped ZnO top electrodes prepared by pulsed laser deposition under different oxygen pressures, Japanese Journal of Applied Physics, 2016, 55, 63, DOI: 10.7567/JJAP.55.06JB04

2015年

■ Takada Y. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Iwai H., The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties, Materials Research Society Symposium Proceedings, 2015, 1729, , DOI: 10.1557/opl.2015.263
■ Takada Y. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Iwai H. , Shishido R., Hydrogen profile measurement of (Pb,La)(Zr,Ti)O3 capacitor with conductive electrode after hydrogen annealing, 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015, 2015, DOI: 10.1109/ISAF.2015.7172695
■ Van Overmeere Q. , Baniecki J.D. , Yamazaki T. , Ricinschi D. , Aso H. , Miyata Y. , Yamada H. , Fujimura N. , Kataoka Y. , Imanaka Y., Interface energetics and atomic structure of epitaxial La1-xSrxCoO3 on Nb:SrTiO3, Applied Physics Letters, 2015, 106, 24, DOI: 10.1063/1.4922880
■ Choi J.H. , Yoshimura T. , Fujimura N., Growth and characterization of (1-x)BiFeO3-x(Bi0.5,K0.5)TiO3 thin films, Japanese Journal of Applied Physics, 2015, 54, 10, DOI: 10.7567/JJAP.54.10NA14
■ Takada Y. , Tsuji T. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Iwai H., Effect of Al-doped ZnO or Sn-doped In2O3 electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors, Japanese Journal of Applied Physics, 2015, 54, 5, DOI: 10.7567/JJAP.54.05ED03
■ Saito T. , Amano T. , Takada Y. , Okamoto N. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A., The orientation controlled (Pb,La)(Zr,Ti)O3 capacitor for improved reliabilities, 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015, 2015, , , DOI: 10.1109/ISAF.2015.7172712
■ Yamada H. , Yoshimura T. , Fujimura N., Effects of polarization of polar semiconductor on electrical properties of poly(vinylidene fluoride-trifluoroethylene)/ZnO heterostructures, Journal of Applied Physics, 2015, 117, 23, DOI: 10.1063/1.4922668
■ Takada Y. , Tsuji T. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Oshima A., Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped ln203 top electrodes in PbLaZrTiOx capacitors, International Journal of Materials Research, 2015, 106, 1, DOI: 10.3139/146.111154
■ Eltanany A.M. , Yoshimura T. , Fujimura N. , Elsayed N.Z. , Ebied M.R. , Ali M.G.S., Theoretical analysis of linear and nonlinear piezoelectric vibrational energy harvesters for human walking, Japanese Journal of Applied Physics, 2015, 54, 10, DOI: 10.7567/JJAP.54.10ND02
■ Miyata Y. , Nose Y. , Yoshimura T. , Ashida A. , Fujimura N., Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy system, Journal of Crystal Growth, 2015, 425, , DOI: 10.1016/j.jcrysgro.2015.03.013

2014年

■ Nakayama M. , Furukawa Y. , Maeda K. , Yoshimura T. , Uga H. , Fujimura N., Correlation between the intra-atomic Mn3+ photoluminescence and antiferromagnetic transition in an YMnO3 epitaxial film, Applied Physics Express, 2014, 7, 2, DOI: 10.7567/APEX.7.023002
■ Nakamura T. , Yoshimura T. , Ashida A. , Fujimura N., Near-surface structure of polar ZnO surfaces prepared by pulsed laser deposition, Thin Solid Films, 2014, 559, , DOI: 10.1016/j.tsf.2013.11.065
■ Takada Y. , Tsuji T. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Oshima A., Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O3 capacitors: Effect of oxide insulator encapsulation and oxide buffer layer, Journal of Materials Science: Materials in Electronics, 2014, 25, 5, DOI: 10.1007/s10854-014-1853-y
■ Kariya K. , Yoshimura T. , Murakami S. , Fujimura N., Enhancement of piezoelectric properties of (100)-orientated BiFeO3films on (100)LaNiO3/Si, Japanese Journal of Applied Physics, 2014, 53, 9, DOI: 10.7567/JJAP.53.09PA14
■ Takada Y. , Tsuji T. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A., Improved reliability properties of (Pb,La) (Zr,Ti)O3 ferroelectric capacitors by thin aluminium-doped zinc oxide buffer layer, Electronics Letters, 2014, 50, 11, DOI: 10.1049/el.2014.0187
■ Kariya K. , Yoshimura T. , Murakami S. , Fujimura N., Output power of piezoelectric MEMS vibration energy harvesters under random oscillations, Journal of Physics: Conference Series, 2014, 557, 1, DOI: 10.1088/1742-6596/557/1/012101
■ Kariya K. , Yoshimura T. , Murakami S. , Fujimura N., Piezoelectric properties of (100) orientated BiFeO3 thin films on LaNiO3, Japanese Journal of Applied Physics, 2014, 53, 8 SPEC. ISSUE 3, DOI: 10.7567/JJAP.53.08NB02
■ Ujimoto K. , Yoshimura T. , Wakazono K. , Ashida A. , Fujimura N., Crystal structure and local piezoelectric properties of strain-controlled (001) BiFeO3 epitaxial thin films, Thin Solid Films, 2014, 550, DOI: 10.1016/j.tsf.2013.10.178

2013年

■ Takada Y. , Tsuji T. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Oshima A., Electrical properties of sol-gel derived PbLaZrTiOx capacitors with nonnoble metal oxide top electrodes, ECS Transactions, 2013, 50, 34, DOI: 10.1149/05034.0043ecst
■ Nomura Y. , Yoshimura T. , Fujimura N., Fabrication and electric properties of ferroelectric-gate thin film transistors with nano-channel, Journal of the Vacuum Society of Japan, 2013, 56, 5, DOI: 10.3131/jvsj2.56.172
■ Yachi Y. , Yoshimura T. , Fujimura N., Effect of the annealing temperature of P(VDF/TrFE) thin films on their ferroelectric properties, Journal of the Korean Physical Society, 2013, 62, 7, DOI: 10.3938/jkps.62.1065
■ Murakami S. , Yoshimura T. , Satoh K. , Wakazono K. , Kariya K. , Fujimura N., Development of piezoelectric MEMS vibration energy harvester using (100) oriented BiFeO3 ferroelectric film, Journal of Physics: Conference Series, 2013, 476, 1, DOI: 10.1088/1742-6596/476/1/012007
■ Nose Y. , Nakamura T. , Yoshimura T. , Ashida A. , Uehara T. , Fujimura N., Orientation control of ZnO films deposited using nonequilibrium atmospheric pressure N2/O2 plasma, Japanese Journal of Applied Physics, 2013, 52, 1 PART2, DOI: 10.7567/JJAP.52.01AC03
■ Saito T. , Takada Y. , Tsuji T. , Okamoto N. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Oshima A., Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes, 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013, 2013, , , DOI: 10.1109/ISAF.2013.6748734
■ Yoshimura T. , Ujimoto K. , Kawahara Y. , Wakazono K. , Kariya K. , Fujimura N. , Murakami S., Enhancement of direct piezoelectric properties of domain-engineered (100) BiFeO3 films, Japanese Journal of Applied Physics, 2013, 52, 9 PART2, DOI: 10.7567/JJAP.52.09KA03
■ Yoshimura T. , Murakami S. , Wakazono K. , Kariya K. , Fujimura N., Piezoelectric vibrational energy harvester using lead-free ferroelectric BiFeO3 films, Applied Physics Express, 2013, 6, 5, DOI: 10.7567/APEX.6.051501
■ Ujimoto K. , Yoshimura T. , Ashida A. , Fujimura N., Effect of target surface microstructure on morphological and electrical properties of pulsed-laser-deposited BiFeO3 epitaxial thin films, Japanese Journal of Applied Physics, 2013, 52, 4 PART 1, DOI: 10.7567/JJAP.52.045803
■ Wakazono K. , Kawahara Y. , Ujimoto K. , Yoshimura T. , Fujimura N., Effects of La substitution for BiFeO3 epitaxial thin films, Journal of the Korean Physical Society, 2013, 62, 7, DOI: 10.3938/jkps.62.1069
■ Takada Y. , Tsuji T. , Okamoto N. , Saito T. , Kondo K. , Yoshimura T. , Fujimura N. , Higuchi K. , Kitajima A. , Oshima A., Comparative study of electrical properties of PbLaZrTiOx capacitors with Al-doped ZnO and ITO top electrodes, 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013, 2013, , , DOI: 10.1109/ISAF.2013.6748710
■ Miyata Y. , Takata H. , Okuyama Y. , Yoshimura T. , Fujimura N., Field effect of magnetic semiconductor Si:Ce thin films using organic ferroelectrics, Journal of the Vacuum Society of Japan, 2013, 56, 4, DOI: 10.3131/jvsj2.56.136

2012年

■ Nose Y. , Yoshimura T. , Ashida A. , Uehara T. , Fujimura N., Low temperature growth of ZnO thin films by non-equilibrium atmospheric pressure N 2/O 2 plasma and the growth morphology of the films, Zairyo/Journal of the Society of Materials Science, Japan, 2012, 61, 9, DOI: 10.2472/jsms.61.756
■ Kawahara Y. , Ujimoto K. , Yoshimura T. , Fujimura N., Control of crystal structure of bifeo 3 epitaxial thin films by adjusting growth conditions and piezoelectric properties, Japanese Journal of Applied Physics, 2012, 51, 9 PART 2, DOI: 10.1143/JJAP.51.09LB04
■ Yamada H. , Yoshimura T. , Fujimura N., Electronic transport in organic ferroelectric gate field-effect transistors with ZnO channel, Materials Research Society Symposium Proceedings, 2012, 1430, , DOI: 10.1557/opl.2012.900
■ Yasuda K. , Niraula M. , Fujimura N. , Tachi T. , Inuzuka H. , Namba S. , Muramatsu S. , Kondo T. , Agata Y., Dark current characteristics of a radiation detector array developed using MOVPE-grown thick CdTe layers on Si substrate, Journal of Electronic Materials, 2012, 41, 10, DOI: 10.1007/s11664-012-2121-7
■ Ujimoto K. , Yoshimura T. , Ashida A. , Fujimura N., Direct piezoelectric properties of (100) and (111) BiFeO 3 epitaxial thin films, Applied Physics Letters, 2012, 100, 10, DOI: 10.1063/1.3692579
■ Yagi S. , Kondo Y. , Satake Y. , Ashida A. , Fujimura N., Local pH control by electrolysis for ZnO epitaxial deposition on a Pt cathode, Electrochimica Acta, 2012, 62, , DOI: 10.1016/j.electacta.2011.12.059
■ Ishii M. , Terauchi M. , Yoshimura T. , Nakayama T. , Fujimura N., Investigation of gas sensing characteristics of TiO2 nanotube field-effect transistor, Japanese Journal of Applied Physics, 2012, 51, 11 PART2, DOI: 10.1143/JJAP.51.11PE10
■ Ujimoto K. , Yoshimura T. , Fujimura N., Growth temperature and thickness dependences of crystal and micro domain structures of BiFeO 3 epitaxial films, Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012, 2012, , , DOI: 10.1109/ISAF.2012.6297846
■ Niraula M. , Yasuda K. , Fujimura N. , Tachi T. , Inuzuka H. , Namba S. , Kondo T. , Muramatsu S. , Agata Y., Development of spectroscopic imaging arrays using epitaxially grown thick single crystal CdTe layers on si substrates, IEEE Transactions on Nuclear Science, 2012, 59, 6, DOI: 10.1109/TNS.2012.2215628
■ Ishii M. , Terauchi M. , Yoshimura T. , Nakayama T. , Fujimura N., Electric conduction of TiO 2 nanotube field effect transistor fabricated by dielectrophoresis, Zairyo/Journal of the Society of Materials Science, Japan, 2012, 61, 9, DOI: 10.2472/jsms.61.766
■ Yamada H. , Yoshimura T. , Fujimura N., Effect of ferroelectric polarization on carrier transport in controlled polarization-type ferroelectric gate field-effect transistors with poly(vinylidene fluoride-tetrafluoroethylene)/ZnO heterostructure, Japanese Journal of Applied Physics, 2012, 51, 11 PART2, DOI: 10.1143/JJAP.51.11PB01
■ Yasuda K. , Niraula M. , Tachi T. , Fujimura N. , Inuzuka H. , Kondo T. , Namba S. , Muramatsu S. , Agata Y., Fabrication of radiation imaging detector arrays using MOVPE grown thick single crystal CdTe layers on Si substrate, Physica Status Solidi (C) Current Topics in Solid State Physics, 2012, 9, 45878, DOI: 10.1002/pssc.201100517

2011年

■ Ishii M. , Terauchi M. , Yoshimura T. , Nakayama T. , Fujimura N., Characterization of field effect transistor with TiO2 nanotube channel fabricated by dielectrophoresis, IOP Conference Series: Materials Science and Engineering, 2011, 18, SYMPOSIUM 5, DOI: 10.1088/1757-899X/18/8/082019
■ Miyabuchi H. , Yoshimura T. , Fujimura N. , Murakami S., Direct piezoelectricity of PZT films and application to vibration energy harvesting, Journal of the Korean Physical Society, 2011, 59, 31, DOI: 10.3938/jkps.59.2524
■ Kondo Y. , Ashida A. , Nouzu N. , Fujimura N., ZnO crystal growth on microelectrode by electrochemical deposition method, IOP Conference Series: Materials Science and Engineering, 2011, 18, SYMPOSIUM 6, DOI: 10.1088/1757-899X/18/9/092043
■ Shindo D. , Sakurai S. , Fujimura N., Ce-induced reconstruction of Si(001) surface structures, Japanese Journal of Applied Physics, 2011, 50, 6 PART 1, DOI: 10.1143/JJAP.50.065701
■ Yamada H. , Fukushima T. , Yoshimura T. , Fujimura N., Effect of ferroelectric polarization domain structure on electronic transport property of ferroelectric/ZnO heterostructure, Japanese Journal of Applied Physics, 2011, 50, 9 PART 3, DOI: 10.1143/JJAP.50.09NA06
■ Ujimoto K. , Izumi H. , Yoshimura T. , Ashida A. , Fujimura N., Effect of lattice misfit strain on crystal system and ferroelectric property of BiFeO3 epitaxial thin films, IOP Conference Series: Materials Science and Engineering, 2011, 18, SYMPOSIUM 6, DOI: 10.1088/1757-899X/18/9/092064
■ Miyabuchi H. , Yoshimura T. , Murakami S. , Fujimura N., Characterization of direct piezoelectric effect in 31 and 33 modes for application to vibration energy harvester, Japanese Journal of Applied Physics, 2011, 50, 9 PART 3, DOI: 10.1143/JJAP.50.09ND17
■ Fukushima T. , Maeda K. , Yoshimura T. , Ashida A. , Fujimura N., Impedance analysis of controlled-polarization-type ferroelectric-gate thin film transistor using resistor-capacitor lumped constant circuit, Japanese Journal of Applied Physics, 2011, 50, 4 PART 2, DOI: 10.1143/JJAP.50.04DD16
■ Ashida A. , Nouzu N. , Fujimura N., Initial growth process in electrochemical deposition of ZnO, Japanese Journal of Applied Physics, 2011, 50, 5 PART 3, DOI: 10.1143/JJAP.50.05FB12
■ Yoshimura T. , Miyabuchi H. , Murakami S. , Ashida A. , Fujimura N., Characterization of direct piezoelectric properties for vibration energy harvesting, IOP Conference Series: Materials Science and Engineering, 2011, 18, SYMPOSIUM 6, DOI: 10.1088/1757-899X/18/9/092026
■ Yamada H. , Fukushima T. , Yoshimura T. , Fujimura N., Electronic transport property of a YbMnO3/ZnO heterostructure, Journal of the Korean Physical Society, 2011, 58, 4, DOI: 10.3938/jkps.58.792
■ Niraula M. , Yasuda K. , Fujimura N. , Tachi T. , Inuzuka H. , Namba S. , Kondo T. , Muramatsu S. , Agata Y., Development of spectroscopic imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates, IEEE Nuclear Science Symposium Conference Record, 2011, , , DOI: 10.1109/NSSMIC.2011.6154700
■ Saito T. , Tsuji T. , Izumi K. , Hirota Y. , Okamoto N. , Kondo K. , Yoshimura T. , Fujimura N. , Kitajima A. , Oshima A., Fabrication of robust PbLa(Zr,Ti)O3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration, Electronics Letters, 2011, 47, 8, DOI: 10.1049/el.2011.0461
■ Nakamura T. , Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films, Journal of Crystal Growth, 2011, 318, 1, DOI: 10.1016/j.jcrysgro.2010.10.044
■ Hayakawa R. , Yoshida M. , Ide K. , Yamashita Y. , Yoshikawa H. , Kobayashi K. , Kunugi S. , Uehara T. , Fujimura N., Structural analysis and electrical properties of pure Ge3N 4 dielectric layers formed by an atmospheric-pressure nitrogen plasma, Journal of Applied Physics, 2011, 110, 6, DOI: 10.1063/1.3638133
■ Nakamura T. , Fujimura N., The difference of surface treatment method for ZnO single crystals and the epitaxial growth process occurred by the difference in the surface polarity, Zairyo/Journal of the Society of Materials Science, Japan, 2011, 60, 11, DOI: 10.2472/jsms.60.983

2010年

■ Ujimoto K. , Yoshimura T. , Fujimura N., Local piezoelectric and conduction properties of BiFeO3 epitaxial thin films, Japanese Journal of Applied Physics, 2010, 49, 9 PART 2, DOI: 10.1143/JJAP.49.09MB02
■ Fukushima T. , Yoshimura T. , Masuko K. , Maeda K. , Ashida A. , Fujimura N., Analysis of carrier modulation in channel of ferroelectric-gate transistors having polar semiconductor, Thin Solid Films, 2010, 518, 11, DOI: 10.1016/j.tsf.2009.09.185
■ Yoshimura T. , Maeda K. , Ashida A. , Fujimura N., Ferroelectric properties of magnetoferroelectric YMnO3 epitaxial films at around the Neel temperature, Key Engineering Materials, 2010, 445, , DOI: 10.4028/www.scientific.net/KEM.445.144
■ AsHIDA A. , Fujimura N., ZnO thin films prepared by electrochemical deposition method at constant current density, Zairyo/Journal of the Society of Materials Science, Japan, 2010, 59, 9, DOI: 10.2472/jsms.59.681
■ Yoshimura T. , Sakiyama H. , Oshio T. , Ashida A. , Fujimura N., Direct piezoelectric properties of Mn-doped ZnO epitaxial films, Japanese Journal of Applied Physics, 2010, 49, 2 Part 1, DOI: 10.1143/JJAP.49.021501
■ Nouzu N. , Ashida A. , Yoshimura T. , Fujimura N., Control of cathodic potential for deposition of ZnO by constant-current electrochemical method, Thin Solid Films, 2010, 518, 11, DOI: 10.1016/j.tsf.2009.09.194
■ Kakehi Y. , Satoh K. , Yoshimura T. , Ashida A. , Fujimura N., Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films, Thin Solid Films, 2010, 518, 11, DOI: 10.1016/j.tsf.2009.07.204
■ Shindo D. , Fujii K. , Terao T. , Sakurai S. , Mori S. , Kurushima K. , Fujimura N., The effects of aluminum doping for the magnetotransport property of Si:Ce thin films, Journal of Applied Physics, 2010, 107, 9, DOI: 10.1063/1.3352981
■ Nakamura T. , Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition, Thin Solid Films, 2010, 518, 11, DOI: 10.1016/j.tsf.2009.09.184

2009年

■ Kakehi Y. , Satoh K. , Yotsuya T. , Masuko K. , Yoshimura T. , Ashida A. , Fujimura N., Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques, Journal of Crystal Growth, 2009, 311, 4, DOI: 10.1016/j.jcrysgro.2008.11.060
■ Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier, Physical Review B - Condensed Matter and Materials Physics, 2009, 80, 12, DOI: 10.1103/PhysRevB.80.125313
■ Maeda K. , Yoshimura T. , Fujimura N., Polarization switching behavior of YMnO3 thin film at around magnetic phase transition temperature, Japanese Journal of Applied Physics, 2009, 48, 9 Part 2, DOI: 10.1143/JJAP.48.09KB05
■ Terao T. , Fujii K. , Shindo D. , Yoshimura T. , Fujimura N., Magnetic properties of uniformly Ce-doped Si thin films with n-type conduction, Japanese Journal of Applied Physics, 2009, 48, 3, DOI: 10.1143/JJAP.48.033003
■ Kakehi Y. , Satoh K. , Yoshimura T. , Ashida A. , Fujimura N., Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films, Vacuum, 2009, 84, 5, DOI: 10.1016/j.vacuum.2009.06.023
■ Fukumura H. , Hasuike N. , Harima H. , Kisoda K. , Fukae K. , Yoshimura T. , Fujimura N., Spin-phonon coupling in multiferroic YbMnO3 studied by Raman scattering, Journal of Physics Condensed Matter, 2009, 21, 6, DOI: 10.1088/0953-8984/21/6/064218
■ Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Electron transport properties of Zn0.88 Mn0.12 O/ZnO modulation-doped heterostructures, Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 2009, 27, 3, DOI: 10.1116/1.3093916
■ Saito T. , Izumi K. , Hirota Y. , Okamoto N. , Kondo K. , Yoshimura T. , Fujimura N., Amorphous carbon film deposition for hydrogen barrier in FeRAM integration by radio frequency plasma chemical vapor deposition, ECS Transactions, 2009, 25, 8 PART 2, DOI: 10.1149/1.3207657

2008年

■ Masuko K. , Sakiyama H. , Ashida A. , Yoshimura T. , Fujimura N., Effects of spontaneous and piezoelectric polarizations on carrier confinement at the Zn0.88Mn0.12O/ZnO interface, Physica Status Solidi (C) Current Topics in Solid State Physics, 2008, 5, 9, DOI: 10.1002/pssc.200779222
■ Shindo D. , Yoshimura T. , Fujimura N.,  Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si, Applied Surface Science, 2008, 254, 19, DOI: 10.1016/j.apsusc.2008.02.145
■ Oshio T. , Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films, Journal of Applied Physics, 2008, 103, 9, DOI: 10.1063/1.2905315
■ Matsuo Y. , Suzuki M. , Noguchi Y. , Yoshimura T. , Fujimura N. , Yoshii K. , Ikeda N. , Mori S., Effects of oxygen annealing on dielectric properties of LuFeCuO4, Japanese Journal of Applied Physics, 2008, 47, 11, DOI: 10.1143/JJAP.47.8464
■ Fukae K. , Takahashi T. , Yoshimura T. , Fujimura N., Magnetic and dielectric properties of Yb(Mn1-xAl x)O3 thin films, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2008, 55, 5, DOI: 10.1109/TUFFC.2008.756
■ Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (0001) single-crystal substrates, Journal of Applied Physics, 2008, 103, 4, DOI: 10.1063/1.2841056
■ Saito T. , Hirota Y. , Ooyanagi M. , Okamoto N. , Kondo K. , Yoshimura T. , Fujimura N., CaBi4Ti4O15 thin film deposition on electroplated Platinum substrates using a sol-gel method, Materials Research Society Symposium Proceedings, 2008, 1113, , DOI: 10.1557/proc-1113-f03-27
■ Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Spin-dependent transport in a ZnMnO/ZnO heterostructure, Journal of Applied Physics, 2008, 103, 7, DOI: 10.1063/1.2837882
■ Oshio T. , Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Electro-optic property of ZnO:Mn epitaxial films, Physica Status Solidi (C) Current Topics in Solid State Physics, 2008, 5, 9, DOI: 10.1002/pssc.200779246
■ Kakehi Y. , Satoh K. , Yotsuya T. , Ashida A. , Yoshimura T. , Fujimura N., Electrical and optical properties of excess oxygen intercalated CuScO2(0001) epitaxial films prepared by oxygen radical annealing, Thin Solid Films, 2008, 516, 17, DOI: 10.1016/j.tsf.2007.10.038
■ Sakamoto S. , Oshio T. , Ashida A. , Yoshimura T. , Fujimura N., Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films, Applied Surface Science, 2008, 254, 19, DOI: 10.1016/j.apsusc.2008.02.126
■ Fukushima T. , Yoshimura T. , Masuko K. , Maeda K. , Ashida A. , Fujimura N., Electrical characteristics of controlled-polarization-type ferroelectric-gate field-effect transistor, Japanese Journal of Applied Physics, 2008, 47, 12, DOI: 10.1143/JJAP.47.8874

2007年

■ Fukumura H. , Matsui S. , Harima H. , Kisoda K. , Takahashi T. , Yoshimura T. , Fujimura N., Raman scattering studies on multiferroic YMnO3, Journal of Physics Condensed Matter, 2007, 19, 36, DOI: 10.1088/0953-8984/19/36/365239
■ Fujimura N. , Takahashi T. , Yoshimura T. , Ashida A., Magnetic frustration behavior of ferroelectric ferromagnet YbMn O3 epitaxial films, Journal of Applied Physics, 2007, 101, 9, DOI: 10.1063/1.2713214
■ Matsui T. , Daido S. , Fujimura N. , Yoshimura T. , Tsuda H. , Morii K., Effect of Bi substitution on the magnetic and dielectric properties of epitaxially grown BaFe0.3Zr0.7O3-δ thin films on SrTiO3 substrates, Journal of Physics and Chemistry of Solids, 2007, 68, 8, DOI: 10.1016/j.jpcs.2007.03.022
■ Terao T. , Nishimura Y. , Shindo D. , Yoshimura T. , Ashida A. , Fujimura N., Magnetic properties of low-temperature grown Si:Ce thin films on (0 0 1) Si substrate, Journal of Magnetism and Magnetic Materials, 2007, 310, 2 SUPPL. PART 3, DOI: 10.1016/j.jmmm.2006.10.938
■ Fujimura N. , Shigemitsu N. , Takahashi T. , Ashida A. , Yoshimura T. , Fukumura H. , Harima H., Multiferroic behaviour of YMnO3 and YbMnO3 epitaxial films, Philosophical Magazine Letters, 2007, 87, 45720, DOI: 10.1080/09500830701250322
■ Masuko K. , Ashida A. , Yoshimura T. , Fujimura N., Preparation and the magnetic property of ZnMnO thin films on (0 0 0 over(1, -)) ZnO single crystal substrate, Journal of Magnetism and Magnetic Materials, 2007, 310, 2 SUPPL. PART 3, DOI: 10.1016/j.jmmm.2006.10.1024
■ Maeda K. , Yoshimura T. , Fujimura N., Influence of antiferromagnetic ordering on ferroelectric polarization switching of YMnO3 epitaxial thin films, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2007, 54, 12, DOI: 10.1109/TUFFC.2007.592
■ Maeda K. , Yoshimura T. , Fujimura N., Influence of antiferromagnetic ordering on ferroelectric polarization switching of YMnO3 epitaxial thin films, IEEE International Symposium on Applications of Ferroelectrics, 2007, , , DOI: 10.1109/ISAF.2007.4393292
■ Terao T. , Nishimura Y. , Shindo D. , Fujimura N., Low temperature growth of Si:Ce thin films with high crystallinity and uniform distribution of Ce grown by solid-source molecular beam epitaxy, Journal of Crystal Growth, 2007, 307, 1, DOI: 10.1016/j.jcrysgro.2007.06.009
■ Fukumura H. , Hasuike N. , Harima H. , Kisoda K. , Fukae K. , Takahashi T. , Yoshimura T. , Fujimura N., Spin-coupled phonons in multiferroic YbMnO3 epitaxial films by Raman scattering, Journal of Physics: Conference Series, 2007, 92, 1, DOI: 10.1088/1742-6596/92/1/012126
■ Nakae M. , Hayakawa R. , Yoshimura T. , Fujimura N. , Kunugi S. , Uehara T., The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma, Journal of Applied Physics, 2007, 101, 2, DOI: 10.1063/1.2424501
■ Fukae K. , Takahashi T. , Yoshimura T. , Fujimura N., Magnetic and dielectric properties of Yb(Mn1-xAl x)O3 thin films, IEEE International Symposium on Applications of Ferroelectrics, 2007, DOI: 10.1109/ISAF.2007.4393291

2006年

■ Sakurai T. , Yoshimura T. , Akita S. , Fujimura N. , Nakayama Y., Single-wall carbon nanotube field effect transistors with non-volatile memory operation, Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45, 37-41, DOI: 10.1143/JJAP.45.L1036
■ Nakayama M. , Tanaka H. , Masuko K. , Fukushima T. , Ashida A. , Fujimura N., Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition, Applied Physics Letters, 2006, 88, 24, DOI: 10.1063/1.2209719
■ Hayakawa R. , Nakae M. , Yoshimura T. , Ashida A. , Fujimura N. , Uehara T. , Tagawa M. , Teraoka Y., Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure, Journal of Applied Physics, 2006, 100, 7, DOI: 10.1063/1.2353781
■ Hayakawa R. , Yoshimura T. , Ashida A. , Uehara T. , Fujimura N., Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure, Thin Solid Films, 2006, 506-507, , DOI: 10.1016/j.tsf.2005.08.106
■ Maeda K. , Yshimura T. , Fujimura N., Magnetic and ferroelectric properties of YMnO3 epitaxial thin films, Materials Research Society Symposium Proceedings, 2006, 966, , DOI: 10.1557/proc-0966-t03-01
■ Takemoto S. , Terao T. , Terai Y. , Yoshida M. , Koizumi A. , Ohta H. , Takeda Y. , Fujimura N. , Fujiwara Y., Magnetic properties of Er,O-codoped GaAs at low temperature, Physica Status Solidi (C) Current Topics in Solid State Physics, 2006, 3, 12, DOI: 10.1002/pssc.200672878
■ Takahashi T. , Yoshimura T. , Fujimura N., Growth and ferromagnetic properties of ferroelectric YbMnO3 thin films, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45, 9 B, DOI: 10.1143/JJAP.45.7329
■ Hayakawa R. , Nakae M. , Yoshimura T. , Ashida A. , Fujimura N. , Uehara T., Effect of additional oxygen on formation of silicon oxynitride using nitrogen plasma generated near atmospheric pressure, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45, 12, DOI: 10.1143/JJAP.45.9025
■ Ashida A. , Nagata T. , Fujimura N., Electro-optical effect in ZnO:Mn thin films prepared by Xe sputtering, Journal of Applied Physics, 2006, 99, 1, DOI: 10.1063/1.2150596
■ Imamura K. , Horibe Y. , Yoshimura T. , Fujimura N. , Mori S. , Ikeda N., Conduction characteristics of charge ordering type ferroelectrics,YFe 2O4, Materials Research Society Symposium Proceedings, 2006, 966, , DOI: 10.1557/proc-0966-t07-27

2005年

■ Inoue T. , Matsui T. , Fujimura N. , Morii K., Ferromagnetic and dielectric behavior of Mn doped BaCoO3, INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, 2005
■ Haratake K. , Shigemitsu N. , Nishijima M. , Yoshimura T. , Fujimura N., Low-temperature growth and characterization of epitaxial YMnO 3/Y2O3/Si MFIS capacitors with thinner insulator layer, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44, 9 B, DOI: 10.1143/JJAP.44.6977
■ Matsui T. , Taketani E. , Fujimura N. , Tsuda H. , Morii K., Enhancement of ferromagnetic ordering in dielectric Ba Fe 1-x Zr x O 3-δ (x=0.5-0.8) single-crystal films by pulsed laser-beam deposition, Journal of Applied Physics, 2005, 97, 10, DOI: 10.1063/1.1850860
■ Fujimura N. , Yoshimura T., Preparation and properties of ferroelectric-insulator-semiconductor junctions using YMnO3 thin films, Topics in Applied Physics, 2005, 98, , DOI: 10.1007/978-3-540-31479-0_11
■ Hayakawa R. , Yoshimura T. , Nakae M. , Uehara T. , Ashida A. , Fujimura N., Fabrication of silicon nitride film using pure nitrogen plasma generated near atmospheric pressure for III-V semiconductor fabrication, Materials Research Society Symposium Proceedings, 2005, 831
■ Ashida A. , Masuko K. , Edahiro T. , Oshio T. , Fujimura N., Interface characteristics of (Zn,Mn)O/ZnO grown on ZnO substrate, Journal of Crystal Growth, 2005, 275, 45659, DOI: 10.1016/j.jcrysgro.2004.11.305
■ Matsui T. , Taketani E. , Tsuda H. , Fujimura N. , Morii K., Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution, Applied Physics Letters, 2005, 86, 8, DOI: 10.1063/1.1868887
■ Kakehi Y. , Satoh K. , Yotsuya T. , Nakao S. , Yoshimura T. , Ashida A. , Fujimura N., Epitaxial growth of CuScO2 thin films on sapphire a -plane substrates by pulsed laser deposition, Journal of Applied Physics, 2005, 97, 8, DOI: 10.1063/1.1868061
■ Inoue T. , Matsui T. , Fujimura N. , Tsuda H. , Morii K., Ferromagnetic and dielectric behavior of Mn-doped BaCoO3, IEEE Transactions on Magnetics, 2005, 41, 10, DOI: 10.1109/TMAG.2005.854766
■ Terao T. , Yoshimizu Y. , Nishimura Y. , Fujimura N., Magnetic properties of low temperature grown Si:Ce thin films on (001) Si substrate by molecular beam epitaxy, INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, 2005, , , DOI: 10.1109/intmag.2005.1463562

2004年

■ Shigemitsu N. , Sakata H. , Ito D. , Yoshimura T. , Ashida A. , Fujimura N., Pulsed-laser-deposited YMnO3 epitaxial films with square polarization-electric field hysteresis loop and low-temperature growth, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43, 9 B, DOI: 10.1143/JJAP.43.6613
■ Okada M. , Yoshimura T. , Ashida A. , Fujimura N., Synthesis of Bi(FexAl1-x)O3 thin films by pulsed laser deposition and its structural characterization, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43, 9 B, DOI: 10.1143/JJAP.43.6609
■ Taketani E. , Matsui T. , Fujimura N. , Morii K., Effect of oxygen deficiencies on magnetic properties of epitaxial grown BaFeO3 thin films on (100) SrTiO3 substrates, IEEE Transactions on Magnetics, 2004, 40, 4 II, DOI: 10.1109/TMAG.2004.830168
■ Ashida A. , Ohta H. , Nagata T. , Nakano Y. , Fujimura N. , Ito T., Optical propagation loss of ZnO films grown on sapphire, Journal of Applied Physics, 2004, 95, 4, DOI: 10.1063/1.1639143
■ Hayakawa R. , Yoshimura T. , Ashida A. , Fujimura N. , Kitahata H. , Yuasa M., Analysis of nitrogen plasma generated by a pulsed plasma system near atmospheric pressure, Journal of Applied Physics, 2004, 96, 11, DOI: 10.1063/1.1810202
■ Yoshimura T. , Trolier-McKinstry S., Piezoelectric Properties of Ferroelectric Epitaxial Films with High Curie Temperature, IEEJ Transactions on Sensors and Micromachines, 2004, 124, 4, DOI: 10.1541/ieejsmas.124.117
■ Yoshimura T. , Fujimura N., P-E measurements for ferroelectric gate capacitors, Integrated Ferroelectrics, 2004, 61, , DOI: 10.1080/10584580490458847
■ Hayakawa R. , Yoshimura T. , Ashida A. , Kitahata H. , Yuasa M. , Fujimura N., Formation of silicon oxynitride films with low leakage current using N 2/O2 plasma near atmospheric pressure, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43, 11 B, DOI: 10.1143/JJAP.43.7853
■ Nagata T. , Ashida A. , Fujimura N. , Ito T., Electro-optic effect in ZnO:Mn thin films, Journal of Alloys and Compounds, 2004, 371, 45659, DOI: 10.1016/j.jallcom.2003.06.016
■ Nagata T. , Ashida A. , Fujimura N. , Ito T., The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering, Journal of Applied Physics, 2004, 95, 8, DOI: 10.1063/1.1682682

2003年

■ Yoshimura T. , Ito D. , Sakata H. , Shigemitsu N. , Haratake K. , Ashida A. , Fujimura N., Investigation of retention properties for YMnO3 based metal/ferroelectric/insulator/semiconductor capacitors, Materials Research Society Symposium - Proceedings, 2003, 786, , DOI: 10.1557/proc-786-e9.7/c9.7
■ Ito D. , Fujimura N. , Yoshimura T. , Ito T., Ferroelectric properties of YMnO3 epltaxial films for ferroelectric-gate field-effect transistors, Journal of Applied Physics, 2003, 93, 9, DOI: 10.1063/1.1564862
■ Matsui T. , Tanaka H. , Taketani E. , Fujimura N. , Ito T. , Morii K., Magnetic and dielectric properties of epitaxially grown BaFeO3 thin films on SrTiO3 single-crystal substrates, Journal of the Korean Physical Society, 2003, 42, SUPPL.
■ Edahiro T. , Fujimura N. , Ito T., Formation of two-dimensional electron gas and the magnetotransport behavior of ZnMnO/ZnO heterostructure, Journal of Applied Physics, 2003, 93, 10 3, DOI: 10.1063/1.1558612
■ Yokota T. , Fujimura N. , Ito T., Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films, Journal of Applied Physics, 2003, 93, 7, DOI: 10.1063/1.1559436
■ Yoshimura T. , Ito D. , Sakata H. , Shigemitsu N. , Haratake K. , Ashida A. , Fujimura N., Investigation of retention properties for YMnO3 based metal/ferroelectric/insulator/semiconductor capacitors, Materials Research Society Symposium - Proceedings, 2003, 784, , DOI: 10.1557/proc-784-c9.7/e9.7
■ Yokota T. , Fujimura N. , Wada T. , Hamasaki S. , Ito T., Effect of carrier for magnetic and magnetotransport properties of Si:Ce films, Journal of Applied Physics, 2003, 93, 10, DOI: 10.1063/1.1556116
■ Fujimura N. , Sakata H. , Ito D. , Yoshimura T. , Yokota T. , Ito T., Ferromagnetic and ferroelectric behaviors of A-site substituted YMnO3-based epitaxial thin films, Journal of Applied Physics, 2003, 93, 10, DOI: 10.1063/1.1556165
■ Sakata H. , Ito D. , Yoshimura T. , Ashida A. , Fujimura N., Improvement of surface morphology and dielectric property of YMnO3 films, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42, 9 B, DOI: 10.1143/jjap.42.6003
■ Ito D. , Fujimura N. , Yoshimura T. , Ito T., Influence of Schottky and Poole-Frenkel emission on the retention property of YMnO3-based metal/ferroelectric/insulator/semiconductor capacitors, Journal of Applied Physics, 2003, 94, 6, DOI: 10.1063/1.1601292
■ Matsui T. , Taketani E. , Fujimura N. , Ito T. , Morii K., Magnetic properties of highly resistive BaFeO3 thin films epitaxially grown on SrTiO3 single-crystal substrates, Journal of Applied Physics, 2003, 93, 10 2, DOI: 10.1063/1.1556166
■ Yoshimura T. , Fujimura N., Polarization hysteresis loops of ferroelectric gate capacitors measured by Sawyer-Tower circuit, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42, 9 B, DOI: 10.1143/jjap.42.6011

2002年

■ Nagata T. , Ashida A. , Fujimura N. , Ito T., Electro-optic effect in epitaxial ZnO:Mn thin films, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41, 11 B, DOI: 10.1143/JJAP.41.6916
■ Fujimura N. , Sakata H. , Ito D. , Yokota T. , Ito T., Effect of A-site substitution on the magnetic and dielectric behaviors of YMnO3 based ferroelectric thin films, IEEE International Symposium on Applications of Ferroelectrics, 2002
■ Matsui T. , Tanaka H. , Fujimura N. , Ito T. , Mabuchi H. , Morii K., Structural, dielectric, and magnetic properties of epitaxially grown BaFeO3 thin films on (100) SrTiO3 single-crystal substrates, Applied Physics Letters, 2002, 81, 15, DOI: 10.1063/1.1513213
■ Fujimura N. , Ito D. , Ito T., The progress of YMnO 3/Y 2O 3/Si system for a ferroelectric gate field effect transistor, Ferroelectrics, 2002, 271, , DOI: 10.1080/00150190211525
■ Yokota T. , Fujimura N. , Ito T., Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor, Si1-xCex films, Applied Physics Letters, 2002, 81, 21, DOI: 10.1063/1.1524030
■ Yokota T. , Fujimura N. , Wada T. , Hamasaki S. , Ito T., Ce concentration dependence on the magnetic and transport properties of ce doped si epitaxial films prepared by molecular beam epitaxy, Journal of Applied Physics, 2002, 91, 10, DOI: 10.1063/1.1451878
■ Ito D. , Fujimura N. , Ito T., The effect of leakage current on the retention property of YMnO3 based MFIS capacitor, Integrated Ferroelectrics, 2002, 49, , DOI: 10.1080/713718364
■ Matsui T. , Kitano Y. , Fujimura N. , Morii K. , Ito T., Crystal growth and interfacial characterization of dielectric BaZrO 3 thin films on Si substrates, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41, 11 B, DOI: 10.1143/JJAP.41.6639
■ Ito D. , Fujimura N. , Kakuno K. , Ito T., Retention property analysis of epitaxially grown YMnO3/Y 2O3/Si capacitor, Ferroelectrics, 2002, 271, , DOI: 10.1080/713716221
■ Nagata T. , Shimura T. , Ashida A. , Fujimura N. , Ito T., Electro-optic property of ZnO:X (X = Li,Mg) thin films, Journal of Crystal Growth, 2002, 237-239, 1-4 I, DOI: 10.1016/S0022-0248(01)01957-1
■ Kakuno K. , Ito D. , Fujimura N. , Matsui T. , Ito T., Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition, Journal of Crystal Growth, 2002, 237-239, 1-4 I, DOI: 10.1016/S0022-0248(01)01949-2
■ Kitano Y. , Matsui T. , Fujimura N. , Morii K. , Ito T., Thin film crystal growth of BaZrO3 at low oxygen partial pressure, Journal of Crystal Growth, 2002, 243, 1, DOI: 10.1016/S0022-0248(02)01480-X
■ Yoshimura T. , Trolier-Mckinstry S., Growth and piezoelectric properties of Pb(Yb 1/2Nb 1/2)O 3-PbTiO 3 epitaxial films, Journal of Applied Physics, 2002, 92, 7, DOI: 10.1063/1.1505997
■ Yoshimura T. , Trolier-Mckinstry S., Growth and properties of (001) BiScO3-PbTiO3 epitaxial films, Applied Physics Letters, 2002, 81, 11, DOI: 10.1063/1.1507352
■ Yoshimura T. , Trolier-McKinstry S., Phase development and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 epitaxial films, Integrated Ferroelectrics, 2002, 50, , DOI: 10.1080/10584580215521

2001年

■ Yoshimura T. , Trolier-McKinstry S., Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films, Journal of Crystal Growth, 2001, 229, 1, DOI: 10.1016/S0022-0248(01)01200-3
■ Yoshimura T. , Trolier-McKinstry S., Ferroelectric and piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 films, Materials Research Society Symposium - Proceedings, 2001, 655
■ Yokota T. , Fujimura N. , Morinaga Y. , Ito T., Detailed structural analysis of Ce doped Si thin films, Physica E: Low-Dimensional Systems and Nanostructures, 2001, 10, 45660, DOI: 10.1016/S1386-9477(01)00090-X
■ Morinaga Y. , Edahiro T. , Fujimura N. , Ito T. , Koide T. , Fujiwara Y. , Takeda Y., Magnetic properties of Er and Er, O-doped GaAs grown by organometallic vapor phase epitaxy, Physica E: Low-Dimensional Systems and Nanostructures, 2001, 10, 45660, DOI: 10.1016/S1386-9477(01)00123-0
■ Wakano T. , Fujimura N. , Morinaga Y. , Abe N. , Ashida A. , Ito T., Magnetic and magneto-transport properties of ZnO: Ni films, Physica E: Low-Dimensional Systems and Nanostructures, 2001, 10, 45660, DOI: 10.1016/S1386-9477(01)00095-9
■ Fujimura N. , Ito D. , Kakuno K. , Ito T., Improvement of retention property of YMnO3/Y2O3/Si MFIS cacitor, Materials Research Society Symposium - Proceedings, 2001, 655 
■ Yamaguchi T. , Kato H. , Fujimura N. , Ito T., Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces, Thin Solid Films, 2001, 396, 45659, DOI: 10.1016/S0040-6090(01)01245-7
■ Nagata T. , Shimura T. , Nakano Y. , Ashida A. , Fujimura N. , Ito T., Ferroelectricity in Li-doped ZnO:X thin films and their application in optical switching devices, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40, 9 B, DOI: 10.1143/jjap.40.5615

2000年

■ Kitahata H. , Tadanaga K. , Minami T. , Fujimura N. , Ito T., Origin of leakage current of YMnO3 thin films prepared by the sol-gel method, Materials Research Society Symposium - Proceedings, 2000, 596, , DOI: 
■ Ito D. , Yoshimura T. , Fujimura N. , Ito T., Improvement of Y2O3/Si interface for FeRAM application, Applied Surface Science, 2000, 159, DOI: 10.1016/S0169-4332(00)00085-4
■ Yamaguchi T. , Nikoh H. , Hama A. , Fujimura N. , Ito T., Effect of plasma-induced damage on interfacial reactions of titanium thin films on silicon surfaces, Applied Physics Letters, 2000, 76, 17, DOI: 10.1063/1.126345
■ Fujimura N. , Yoshimura T. , Ito T., Evaluation of ferroelectricity in MFIS type capacitor using pulsed C-V measurements, Materials Research Society Symposium - Proceedings, 2000, 596 
■ Kitahata H. , Tadanaga K. , Minami T. , Fujimura N. , Ito T., Preparation and ferroelectric properties of YMnO3 thin films with c-axis preferred orientation by the sol-gel method, Journal of Sol-Gel Science and Technology, 2000, 19, 45660, DOI: 10.1023/A:1008761327562
■ Yoshimura T. , Fujimura N. , Ito D. , Ito T., Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement , Ferroelectricity in YMnO3/Y2O3/Si structure, Journal of Applied Physics, 2000, 87, 7, DOI: 10.1063/1.372364
■ Fujimura N. , Yamaguchi T. , Kato H. , Ito T., Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface, Applied Surface Science, 2000, 159, , DOI: 10.1016/S0169-4332(00)00069-6
■ Fujimura N. , Yamamori S. , Nakamoto A. , Ito D. , Yokota T. , Ito T., Effect of carrier concentration on the magnetic behavior of ferroelectric YMnO3 ceramics and thin films, IEEE International Symposium on Applications of Ferroelectrics, 2000, 2 
■ Ito D. , Fujimura N. , Ito T., Initial stage of film growth of pulsed laser deposited YMnO3, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39, 9 B, DOI: 10.1143/jjap.39.5525

1999年

■ Fujimura N. , Yoshimura T. , Ito D. , Ito T., YMnO3 and YbMnO3 thin films for fet type FeRAM application, Materials Research Society Symposium - Proceedings, 1999, 574, , DOI: 10.1557/proc-574-237
■ Kitahata H. , Tadanaga K. , Minami T. , Fujimura N. , Ito T., Lowering the crystallization temperature of YMnO3 thin films by the sol-gel method using an yttrium alkoxide, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38, 9 B, DOI: 10.1143/jjap.38.5448
■ Tadanaga K. , Kitahata H. , Minami T. , Fujimura N. , Ito T., Preparation and Dielectric Properties of YMnO3 Ferroelectric Thin Films by the Sol-Gel Method, Journal of Sol-Gel Science and Technology, 1999, 13, 45660, DOI: 
■ Kitahata H. , Tadanaga K. , Minami T. , Fujimura N. , Ito T., Ferroelectricity of YMnO3 thin films prepared via solution, Applied Physics Letters, 1999, 75, 5, DOI: 10.1063/1.124493
■ Fujimura N. , Shimura T. , Wakano T. , Ashida A. , Ito T., Exotic doping for ZnO thin films: Possibility of monolithic optical integrated circuit, Materials Research Society Symposium - Proceedings, 1999, 574, , DOI: 10.1557/proc-574-317
■ Yoshimura T. , Fujimura N. , Ito D. , Ito T., Detailed c-v analysis for ybmnoj/y2oj/si structure, Materials Research Society Symposium - Proceedings, 1999, 574

1998年

■ Yoshimura T. , Fujimura N. , Ito T., Ferroelectric properties of c-oriented YMnO3 films deposited on Si substrates, Applied Physics Letters, 1998, 73, 3, DOI: 10.1063/1.122269
■ Shimura T. , Fujimura N. , Yamamori S. , Yoshimura T. , Ito T., Effects of stoichiometry and A-site substitution on the electrical properties of ferroelectric YMnO3, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1998, 37, 9 B, DOI: 10.1143/jjap.37.5280

■Thomas D.T. , Fujimura N. , Streiffer S.K. , Kingon A.I., Composition and electrode effects on the electrical properties of SrBi2Ta2O9, Materials Research Society Symposium - Proceedings, 1998, 493 
■ Fujimura N. , Thomas D.T. , Streiffer S.K. , Kingon A.I., Preferred orientation, phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films, Japanese Journal of Applied Physics, 1998, 37, 9 B, DOI: 10.1143/jjap.37.5185
■ Kitahata H. , Tadanaga K. , Minami T. , Fujimura N. , Ito T., Microstructure and dielectric properties of YMnO3 thin films prepared by dip-coating, Journal of the American Ceramic Society, 1998, 81, 5, DOI: 10.1111/j.1151-2916.1998.tb02491.x
■ Yoshimura T. , Fujimura N. , Aoki N. , Hokayama K. , Tsukui S. , Kawabata K. , Ito T., Growth and properties of YMnO3 thin films for nonvolatile memories, Journal of the Korean Physical Society, 1998, 32, 4 SUPPL.
■ Fujimura Norifumi , Yoshimura Takeshi , Ito Taichiro, Electrical characterization of ferroelectric YMnO3 films for MF(I)S-FET application, IEEE International Symposium on Applications of Ferroelectrics, 1998

1997年

■ N. Fujimura, H.Tanaka, H.Kitahata, K.Tadanaga, T. Ito, T. Minami, YMnO3 thin films prepared from solutions for non-volatile memory devices, Japanese Journal of Applied Physics, 1997, 36, 12A 
■ Yoshimura T. , Fujimura N. , Aoki N. , Hokayama K. , Tsukui S. , Kawabata K. , Eto T., Fabrication of YMnO3 thin films on Si substrates by a pulsed laser deposition method, Japanese Journal of Applied Physics, 1997, 36, 9B, DOI: 10.1143/jjap.36.5921
■ Aoki N. , Fujimura N. , Yoshimura T. , Ito T., Formation of YMnO3 films directly on Si substrate, Journal of Crystal Growth, 1997, 174, 45661, DOI: 10.1016/S0022-0248(97)00016-X
■ Araki T. , Fujimura N. , Ito T., Mechanism for ordering in SiGe films with reconstructed surface, Applied Physics Letters, 1997, 71, 9, DOI: 10.1063/1.119617
■ Morinaga Y. , Sakuragi K. , Fujimura N. , Ito I., Effect of Ce doping on the growth of ZnO thin films, Journal of Crystal Growth, 1997, 174, 45661, DOI: 10.1016/S0022-0248(97)00045-6
■ Araki T. , Fujimura N. , Ito T., The stability of ordered structures in SiGe films examined by strain-energy calculations, Journal of Crystal Growth, 1997, 174, 45661, DOI: 10.1016/S0022-0248(97)00017-1
■ Yoshimura T. , Fujimura N. , Ito T., The initial stage of BaTiO3 epitaxial films on etched and annealed SrTiO3 substrates, Journal of Crystal Growth, 1997, 174, 45661, DOI: 10.1016/S0022-0248(97)00061-4

1996年

■ Fujimura N. , Ishida T. , Yoshimura T. , Ito T., Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devices, Applied Physics Letters, 1996, 69, 7, DOI: 10.1063/1.117969
■ Fujimura Norifumi , Ishida Tadashi , Yoshimura Takeshi , Ito Taichiro, Fabrication of YMnO3 films: New candidate for non-volatile memory devices, Materials Research Society Symposium - Proceedings, 1996, 433, , DOI: 10.1557/proc-433-119
■ Fujimura N. , Azuma S.-I. , Aoki N. , Yoshimura T. , Ito T., Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devices, Journal of Applied Physics, 1996, 80, 12, DOI: 10.1063/1.363719
■ Araki T. , Fujimura N. , Ito T. , Wakahara A. , Sasaki A., Structural characterization of ordered SiGe films grown on Ge(100) and Si(100) substrates, Journal of Applied Physics, 1996, 80, 7, DOI: 10.1063/1.363333
■ Araki Tsutomu , Fujimura Norifumi , Ito Taichiro, Lattice strain distribution in SiGe films grown on Si (100) substrate measured by x-ray diffraction, Bulletin of the University of Osaka Prefecture, Series A Engineering and Natural Sciences, 1996, 45, 1 
■ Thomas Darin T. , Fujimura Norifumi , Streiffer S.K. , Auciello Orlando , Kingon Angus I., Sr/Bi ratio effects for SrxBiyTa2O9 grown by pulsed laser ablation, IEEE International Symposium on Applications of Ferroelectrics, 1996, 1

1995年

■ Lee S.T. , Fujimura N. , Ito T., Epitaxial growth of BaTiO3 thin films and thier internal stresses, Japanese Journal of Applied Physics, 1995, 34, 9, DOI: 10.1143/JJAP.34.5168
■ Fujimura N. , Tsuboi H. , Ito T., Epitaxial orientation control of LiTaO3 film and interfacial coulomb’ s potential, Japanese Journal of Applied Physics, 1995, 34, 9, DOI: 10.1143/JJAP.34.5163
■ Nagai S. , Tanaka H. , Fujimura N. , Ito T., Orientation control of (Ca,Sr)CuO2 thin films, Journal of Applied Physics, 1995, 77, 8, DOI: 10.1063/1.358556

1994年

■ Nagai S. , Fujimura N. , Tanaka H. , Ito T., (115)Bi2Sr2CuOx epitaxial films on (110)SrTiO3 by solid phase epitaxy, Journal of Crystal Growth, 1994, 140, 45659, DOI: 10.1016/0022-0248(94)90497-9
■ Fujimura N. , Kakinoki M. , Tsuboi H. , Ito T., LiNbO3 film with a new epitaxial orientation on R-cut sapphire, Journal of Applied Physics, 1994, 75, 4, DOI: 10.1063/1.356277

1993年

■ Young Ki Lee , Fujimura N. , Ito T., Epitaxial growth of yttrium silicide YSi2-x on (100) Si, Journal of Alloys and Compounds, 1993, 193, 45659, DOI: 10.1016/0925-8388(93)90374-V
■ Lee Y.K. , Fujimura N. , Ito T. , Itoh N., An X-ray analysis of domain structure in epitaxial YSi2-x films grown on (100)Si substrates, Nanostructured Materials, 1993, 2, 6, DOI: 10.1016/0965-9773(93)90034-9
■ Lee Y.K. , Fujimura N. , Ito T. , Itoh N., Epitaxial growth and structural characterization of erbium silicide formed on (100) Si through a solid phase reaction, Journal of Crystal Growth, 1993, 134, 45720, DOI: 10.1016/0022-0248(93)90133-H
■ Fujimura N. , Tachibana S. , Ito T. , Hosokawa N., Structural control of nonequilibrium WSi2.6 thin films by external stress, Journal of Applied Physics, 1993, 73, 2, DOI: 10.1063/1.353330
■ Lee Young Ki , Fujimura Norifumi , Ito Taichiro, TEM analysis of epitaxial YSi2-x films grown on (100) and (111) Si substrates through a solid phase reaction, Bulletin of the University of Osaka Prefecture, Series A Engineering and Natural Sciences, 1993, 42, 2
■ Fujimura N. , Nishihara T. , Goto S. , Xu J. , Ito T., Control of preferred orientation for ZnOx films: control of self-texture, Journal of Crystal Growth, 1993, 130, 45659, DOI: 10.1016/0022-0248(93)90861-P

1992年

■ Nagai S. , Tanaka H. , Fujimura N. , Ito T., Orientation Control of the Bi2Sr2CuOx Thin Film-Self-texture and Epitaxy, journal of the japan society of powder and powder metallurgy, 1992, 39, 9, DOI: 10.2497/jjspm.39.744
■ Ito T. , Fujimura N. , Kakinoki M., Effects of Interfacial Energy on the Epitaxial Growth of LiNbO3, Journal of the Japan Society of Powder and Powder Metallurgy, 1992, 39, 2, DOI: 10.2497/jjspm.39.105

1991年

■ Fujimura N. , Ito T. , Kakinoki M., Heteroepitaxy of LiNbO3 and LiNb3O8 thin films on C-cut sapphire, Journal of Crystal Growth, 1991, 115, 45661, DOI: 10.1016/0022-0248(91)90853-W
■ Y.K. Lee, N. Fujimura, T. Ito, N. Nishida , Annealing behavior of AL-Y alloy film for interconnection conductor in microeletronic devices, Journal of Vacuum Science & Technology B , 1991, 9(5), , DOI: 10.1116/1.585689
■ Nagai S. , Fujimura N. , Ito T. , Shiraishi K., Formation of the high-tc phase in pb-free bi-sr-ca-cu-o thin film, Japanese Journal of Applied Physics, 1991, 30, 5, DOI: 10.1143/JJAP.30.L826
■ Lee Y.K. , Fujimura N. , Higashi K. , Ito T. , Nishida N., A candidate for interconnection material , Al-Y alloy thin films, Materials Letters, 1991, 10, 45846, DOI: 10.1016/0167-577X(91)90150-5
■ Nagai S. , Fujimura N. , Ito T. , Shiraishi K., The crystallization and growth of the high-Tc phase in the Bi-Sr-Ca-Cu-O thin films, Journal of Crystal Growth, 1991, 115, 45661, DOI: 10.1016/0022-0248(91)90843-T
■ Goto S. , Fujimura N. , Nishihara T. , Ito T., Heteroepitaxy of zinc oxide thin films, considering non-epitaxial preferential orientation, Journal of Crystal Growth, 1991, 115, 45661, DOI: 10.1016/0022-0248(91)90852-V

1990年

■ Fujimura N. , Ito T., TiSi2 formation at the Ti-rich TiNx/Si interface, Applied Surface Science, 1990, 41-42, C, DOI: 10.1016/0169-4332(89)90069-X
■ Kakinoki M. , Ando K. , Fujimura N. , Ito T., The Formation of LiNbO3 thin films, Journal of the Japan Society of Powder and Powder Metallurgy, 1990, 37, 1, DOI: 10.2497/jjspm.37.17
■ Fujimura N. , Matsui T. , Ito T. , Nakayama Y., Solid phase reactions and change in stress of TiN/Ti/Si for a diffusion barrier, Journal of Applied Physics, 1990, 67, 6, DOI: 10.1063/1.345430
■ Nagai S. , Fujimura N. , Ito T., The Phase Transformation and the Behavior of Excess Atoms in Bi System Superconducting Thin Films, Journal of the Japan Society of Powder and Powder Metallurgy, 1990, 37, 1, DOI: 10.2497/jjspm.37.99
■ Fujimura N. , Tachibana S. , Ito T., Characterization of Si-Rich WSix on Si, Applied Surface Science, 1990, 41-42, C, DOI: 10.1016/0169-4332(89)90072-X
■ Fujimura N. , Goto S. , Nishihara T. , Ito T., The Application of ZnOx Thin Films for the Transparent Conducting Films and the SAW devices, Journal of the Japan Society of Powder and Powder Metallurgy, 1990, 37, 1, DOI: 10.2497/jjspm.37.12

1989年

■ Fujimura N. , Nishida N. , Ito T. , Nakayama Y., Effects of texture in the titanium layer on solid state reactions for Al/Ti/Si and Al/TiN/Ti/Si systems, Materials Science and Engineering A, 1989, 108, C, DOI: 10.1016/0921-5093(89)90416-4

1988年

■ Ito T. , Fujimura N. , Nakayama Y., Silicide formation in the Pt/a-Si:H system, Thin Solid Films, 1988, 167, 45659, DOI: 10.1016/0040-6090(88)90495-6
■ Fujimura N. , Kurosaki H. , Ito T. , Nakayama Y., Dissolution pits and Si epitaxial regrowth in the Al/(111)Si system, Journal of Applied Physics, 1988, 64, 9, DOI: 10.1063/1.341276

1987年

■ Ito T. , Fujimura N. , Nishida N. , Kanemura T. , Nakayama Y., Structural characterization of Cu-Cr films, Materials Letters, 1987, 6, 45659, DOI: 10.1016/0167-577X(87)90099-1

1986年

■ Ito Taichiro , Fujimura Norifumi , Nakayama Yutaka, Change in film stress of a-Si:H by annealing, Transactions of the Japan Institute of Metals, 1986, 27, 10, DOI: 10.2320/matertrans1960.27.789
■ Ito T. , Fujimura N. , Nakayama Y., Reactions between Ti and Al films on a-Si:H, Materials Letters, 1986, 4, 45878, DOI: 10.1016/0167-577X(86)90067-4