研究業績リスト（北田　貴弘）

　 学術論文　 |　解説・総説　 |　 国際会議講演　 |　学会発表論文　 |　 招待講演　 |　特許　 |　 競争的外部資金


学術論文

  1. Z. Wang, D. Takatsuki, J. Liang, T. Kitada, N. Shigekawa, and M. Higashiwaki,
    "Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties",
    Journal of Applied Physics 131, 074501 [9 pages] (2022).
    DOI:10.1063/5.0080734
  2. N. Kumagai, X. M. Lu, Y. Minami, T. Kitada, and T. Isu,
    "Mobility and activation energy of lateral photocurrent of InAs quantum dot layers with ultrafast carrier relaxation",
    Physica E: Low-dimensional Systems and Nanostructures 126, 114478 [8 pages] (2020).
    DOI:10.1016/j.physe.2020.114478
  3. H. Shida, K. Kawaguchi, Y. Saito, I. Takazawa, T. Fukasawa, D. Iizasa, T. Saito, T. Kitada, Y. Ishitani, M. Kohda, and K. Morita,
    "Spinorbit parameters derivation using singlefrequency analysis of InGaAs multiple quantum wells in transient spin dynamics regime",
    Journal of Applied Physics 127, 153901 [9 pages] (2020).
    DOI:10.1063/5.0002821
  4. K. Kawaguchi, T. Fukasawa, I. Takazawa, H. Shida, Y. Saito, D. Iizasa, T. Saito, T. Kitada, Y. Ishitani, M. Kohda, and K. Morita,
    "Transient diffusive spin dynamics in intrinsic InGaAs/InAlAs multiple quantum wells",
    Applied Physics Letters 115, 172406 [5 pages] (2019).
    DOI:10.1063/1.5124011
  5. Y. Minami, K. Ogusu, X. M. Lu, N. Kumagai, K. Morita, and T. Kitada,
    "Time-resolved measurements of two-color laser light emitted from GaAs/AlGaAs coupled multilayer cavity",
    Japanese Journal of Applied Physics 58 , SJJC03 [5 pages] (2019).
    DOI:10.7567/1347-4065/ab238c
  6. K. Morita, A. Okumura, H. Takaiwa, I Takazawa, T. Oda, T. Kitada, M. Kohda, and Y. Ishitani,
    "Temperature and laser energy dependence of the electron g-factor in intrinsic InGaAs/InAlAs multiple quantum wells",
    Applied Physics Letters 115, 012404 [5 pages] (2019).
    DOI:10.1063/1.5100343
  7. X. M. Lu, Y. Minami, and T. Kitada,
    "Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates",
    Journal of Crystal Growth 512, 74-77 (2019).
    DOI:10.1016/j.jcrysgro.2019.02.010
  8. X. M. Lu, N. Kumagai, Y. Minami, and T. Kitada,
    "Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity",
    Japanese Journal of Applied Physics 57, 04FH07 [4 pages] (2018).
    DOI:10.7567/JJAP.57.04FH07
  9. T. Kitada, X. M. Lu, Y. Minami, N. Kumagai, and K. Morita,
    "Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding",
    Japanese Journal of Applied Physics 57, 04FH03 [5 pages] (2018).
    DOI:10.7567/JJAP.57.04FH03
  10. X. M. Lu, N. Kumagai, Y. Minami, and T. Kitada,
    "Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates",
    Applied Physics Express 11, 015501 [3 pages] (2018).
    DOI:10.7567/APEX.11.015501
  11. X. M. Lu, H. Ota, N. Kumagai, Y. Minami, T. Kitada, and T. Isu,
    "Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources",
    Journal of Crystal Growth 477, 249-252 (2017).
    DOI:10.1016/j.jcrysgro.2017.01.049
  12. X. M. Lu, N. Kumagai, Y. Minami, T. Kitada, and T. Isu,
    "Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates",
    Journal of Crystal Growth 477, 221-224 (2017).
    DOI:10.1016/j.jcrysgro.2017.01.024
  13. X. M. Lu, H. Ota, N. Kumagai, T. Kitada, and T. Isu,
    "GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices",
    Japanese Journal of Applied Physics 56, 04CH02 [5 pages] (2017).
    DOI:10.7567/JJAP.56.04CH02
  14. Y. Minami, H. Ota, X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells",
    Japanese Journal of Applied Physics 56, 04CH01 [5 pages] (2017).
    DOI:10.7567/JJAP.56.04CH01
  15. T. Kitada, H. Ota, X. M. Lu, N. Kumagai, and T. Isu,
    "Surface emitting devices based on a semiconductor coupled multilayer cavity for novel terahertz light sources",
    IEICE Transactions on Electronics E100-C, 171-178 (2017).
    DOI:10.1587/transele.E100.C.171
  16. T. Kitada, H. Ota, X. M. Lu, N. Kumagai, and T. Isu,
    "Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity",
    Applied Physics Express 9, 111201 [4 pages] (2016).
    DOI:10.7567/APEX.9.111201
  17. K. Murakumo, Y. Yamaoka, N. Kumagai, T. Kitada, and T. Isu,
    "Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 μm cw and pulse excitation",
    Japanese Journal of Applied Physics 55, 04EH12 [5 pages] (2016).
    DOI:10.7567/JJAP.55.04EH12
  18. H. Ota, X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Fabrication of two-color surface emitting device of a coupled cavity structure with InAs QDs formed by wafer-bonding",
    Japanese Journal of Applied Physics 55, 04EH09 [4 pages] (2016).
    DOI:10.7567/JJAP.55.04EH09
  19. M. Ogarane, S. Katoh, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "Terahertz emission from a coupled multilayer cavity with InAs quantum dots",
    Journal of Crystal Growth 425, 303-306 (2015).
    DOI:10.1016/j.jcrysgro.2015.03.023
  20. X. M. Lu, S. Matsubara, Y. Nakagawa, T. Kitada, and T. Isu,
    "Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap",
    Journal of Crystal Growth 425, 106-109 (2015).
    DOI:10.1016/j.jcrysgro.2015.02.074
  21. C. Harayama, S. Katoh, Y. Nakagawa, X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Effect of cavity-layer thicknesses on two-color emission in coupled multilayer cavities with InAs quantum dots",
    Japanese Journal of Applied Physics 54, 04DG10 [4 pages] (2015).
    DOI:10.7567/JJAP.54.04DG10
  22. M. Ogarane, Y. Yasunaga, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "Four-wave mixing in GaAs/AlAs triple-coupled cavity with InAs quantum dots",
    Japanese Journal of Applied Physics 54, 04DG05 [4 pages] (2015).
    DOI:10.7567/JJAP.54.04DG05
  23. H. Katayama, M. Sakai, J. Murooka, M. Kimata, T. Kitada, T. Isu, M. Patrashin, I. Hosako, and Y. Iguchi,
    "Development Status of Type II Superlattice Infrared Detector in JAXA",
    Sensors and Materials 26, 225-234 (2014).
    DOI:10.18494/SAM.2014.971
  24. C. Harayama, S. Katoh, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "Wafer-bonded coupled multilayer cavity with InAs quantum dots for two-color emission",
    Japanese Journal of Applied Physics 53, 04EG11 [4 pages] (2014).
    DOI:10.7567/JJAP.53.04EG11
  25. T. Kitada, Y. Yasunaga, Y. Nakagawa, K. Morita, and T. Isu,
    "Four-wave mixing in a GaAs/AlAs triple-coupled multilayer cavity for novel ultrafast wavelength conversion devices",
    Japanese Journal of Applied Physics 53, 04EG03 [5 pages] (2014).
    DOI:10.7567/JJAP.53.04EG03
  26. T. Kitada, C. Harayama, K. Morita, and T. Isu,
    "Two-color lasing in a coupled multilayer cavity with InAs quantum dots by optical pumping",
    Physica Status Solidi (c) 10, 1434-1437 (2013).
    DOI:10.1002/pssc.201300205
  27. T. Kitada, Y. Yasunaga, Y. Nakagawa, K. Morita, and T. Isu,
    "Wavelength conversion via four-wave mixing in a triple-coupled multilayer cavity",
    Applied Physics Letters 103, 101109 [4 pages] (2013).
    DOI:10.1063/1.4820813
  28. T. Kitada, T. Takahashi, H. Ueyama, K. Morita, and T. Isu,
    "Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers",
    Journal of Crystal Growth 378, 485-488 (2013).
    DOI:10.1016/j.jcrysgro.2012.11.005
  29. T. Kitada, S. Katoh, T. Takimoto, Y. Nakagawa, K. Morita, and T. Isu,
    "Terahertz emission from a GaAs/AlAs coupled multilayer cavity with nonlinear optical susceptibility inversion",
    Applied Physics Letters 102, 251118 [4 pages] (2013).
    DOI:10.1063/1.4813012
  30. T. Kitada, S. Katoh, T. Takimoto, Y. Nakagawa, K. Morita, and T. Isu,
    "Terahertz waveforms generated by second-order nonlinear polarization in GaAs/AlAs coupled multilayer cavities using ultrashort laser pulses,
    IEEE Photonics Journal 5, 6500308 [8 pages] (2013).
    DOI:10.1109/JPHOT.2013.2267536
  31. Y. Yasunaga, H. Ueyama, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "Strongly enhanced four-wave mixing signal from GaAs/AlAs cavity with InAs quantum dots embedded in strain-relaxed barriers",
    Japanese Journal of Applied Physics 52, 04CG09 [3 pages] (2013).
    DOI:10.7567/JJAP.52.04CG09
  32. H. Komatsu, Z. Zhang, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "A GaAs/Air multilayer cavity for a planar-type nonlinear optical device",
    Japanese Journal of Applied Physics 52, 04CG06 [3 pages] (2013).
    DOI:10.7567/JJAP.52.04CG06
  33. K. Morita, H. Ueyama, Y. Yasunaga, Y. Nakagawa, T. Kitada, and T. Isu,
    "GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast all-optical switches",
    Japanese Journal of Applied Physics 52, 04CG04 [4 pages] (2013).
    DOI:10.7567/JJAP.52.04CG04
  34. S. Katoh, T. Takimoto, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "Terahertz radiation from a (113)B GaAs/AlAs coupled multilayer cavity by ultrashort laser pulse excitation",
    Japanese Journal of Applied Physics 51, 04DG05 [4 pages] (2012).
    DOI:10.1143/JJAP.51.04DG05
  35. H. Ueyama, T. Takahashi, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "A GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers for ultrafast all-optical switches",
    Japanese Journal of Applied Physics 51, 04DG06 [4 pages] (2012).
    DOI:10.1143/JJAP.51.04DG06
  36. H. Katayama, J. Murooka, M. Naitoh, T. Imai, R. Sato, E. Tomita, M. Ueno, H. Murakami, S. Kawasaki, K. Bito, M. Kimata, T. Kitada, T. Isu, M. Patrashin, and I. Hosako,
    "Development of type II superlattice detector for future space applications at JAXA",
    Proceedings of SPIE 8353, 83530V [8 pages] (2012).
    DOI:10.1117/12.919006
  37. T. Ito, M. Deki, T. Tomita, S. Matsuo, S. Hashimoto, T. Kitada, T. Isu, S. Onoda, and T. Oshima,
    "Electrical conduction properties of SiC modified by femtosecond laser",
    Journal of Laser Micro/Nanoengineering 7, 16-20 (2012).
    DOI:10.2961/jlmn.2012.01.0003
  38. K. Morita, S. Katoh, T. Takimoto, F. Tanaka, Y. Nakagawa, S. Saito, T. Kitada, and T. Isu,
    "Generation of terahertz radiation from two cavity modes of a GaAs/AlAs coupled multilayer cavity",
    Applied Physics Express 4, 102102 [3 pages] (2011).
    DOI:10.1143/APEX.4.102102
  39. T. Kitada, T. Takahashi, H. Ueyama, K. Morita, and T. Isu,
    "Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers",
    Journal of Crystal Growth 323, 241-243 (2011).
    DOI:10.1016/j.jcrysgro.2010.10.120
  40. T. Kitada, F. Tanaka, T. Takahashi, K. Morita, and T. Isu,
    "Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates",
    Proceedings of SPIE 7937, 79371H [6 pages] (2011).
    DOI:10.1117/12.872103
  41. F. Tanaka, T. Takimoto, K. Morita, T. Kitada, and T. Isu,
    "Time-resolved measurements of sum-frequency generation strongly enhanced in (113)B GaAs/AlAs coupled multilayer cavity",
    Japanese Journal of Applied Physics 50, 04DG03 [4 pages] (2011).
    DOI:10.1143/JJAP.50.04DG03
  42. K. Morita, T. Takahashi, T. Kitada, and T. Isu,
    "Optical Kerr signals markedly enhanced by increasing quality factor in a GaAs/AlAs multilayer cavity",
    Japanese Journal of Applied Physics 50, 04DG02 [4 pages] (2011).
    DOI:10.1143/JJAP.50.04DG02
  43. M. Deki, T. Ito, M. Yamamoto, T. Tomita, S. Matsuo, S. Hashimoto, T. Kitada, T. Isu, S. Onoda, and T. Ohshima,
    "Enhancement of local electrical conductivities in SiC by femtosecond laser modification",
    Applied Physics Letters 98, 133104 [3 pages] (2011).
    DOI:10.1063/1.3573786
  44. T. Kitada, A. Mukaijo, T. Takahashi, T. Mukai, K. Morita, and T. Isu,
    "Excitation wavelength dependence of photocarrier relaxation in Si-doped InAs quantum dots with strain-relaxed InGaAs barriers",
    Physica Status Solidi (c) 8, 334-336 (2011).
    DOI:10.1002/pssc.201000452
  45. K. Morita, T. Takahashi, T. Kanbara, S. Yano, T. Mukai, T. Kitada, and T. Isu,
    "Large optical Kerr signal of GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers",
    Physica E 42, 2505-2508 (2010).
    DOI:10.1016/j.physe.2009.12.035
  46. T. Kitada, A. Mukaijo, T. Takahashi, T. Mukai, K. Morita, and T. Isu,
    "Doping effect on photocarrier lifetime in InAs quantum dots with strain-relaxed InGaAs barriers grown by molecular beam epitaxy",
    Physica E 42, 2540-2543 (2010).
    DOI:10.1016/j.physe.2009.11.015
  47. T. Isu, T. Kanbara, T. Takahashi, K. Morita, and T. Kitada,
    "Optical Kerr signals of GaAs/AlAs multilayer cavities with two-photon resonant quantum wells in the half-wavelength layer",
    Physica Status Solidi (c) 7, 2478-2481 (2010).
    DOI:10.1002/pssc.200983872
  48. K. Morita, N. Niki, T. Kitada, and T. Isu,
    Optical anisotropy of two-photon absorption in GaAs/AlGaAs quantum wells measured by photoluminescence",
    Physica Status Solidi (c) 7, 2482-2485 (2010).
    DOI:10.1002/pssc.200983884
  49. K. Morita, F. Tanaka, T. Takahashi, T. Kitada, and T. Isu,
    "Optical anisotropy of strongly enhanced sum frequency generation in (113)B GaAs/AlAs coupled multilayer cavity",
    Applied Physics Express 3, 072801 [3 pages] (2010).
    DOI:10.1143/APEX.3.072801
  50. T. Takahashi, T. Mukai, K. Morita, T. Kitada, and T. Isu,
    "GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers for planar-type optical Kerr gate switches",
    Japanese Journal of Applied Physics 49, 04DG02 [5 pages] (2010).
    DOI:10.1143/JJAP.49.04DG02
  51. F. Tanaka, T. Takahashi, K. Morita, T. Kitada, and T. Isu,
    "Strong sum frequency generation in a GaAs/AlAs coupled multilayer cavity grown on a (113)B-oriented GaAs substrate",
    Japanese Journal of Applied Physics 49, 04DG01 [3 pages] (2010).
    DOI:10.1143/JJAP.49.04DG01
  52. T. Tomita, M. Iwami, M. Yamamoto, M. Deki, S. Matsuo, S. Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, S. Onoda, and T. Ohshima,
    "Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide",
    Materials Science Forum 645-648, 239-242 (2010).
    DOI:10.4028/www.scientific.net/MSF.645-648.239
  53. T. Kitada, F. Tanaka, T. Takahashi, K. Morita, and T. Isu,
    "GaAs/AlAs coupled multilayer cavity structures for terahertz emission devices",
    Applied Physics Letters 95, 111106 [3 pages] (2009).
    DOI:10.1063/1.3226667
  54. K. Morita, T. Takahashi, T. Kitada, and T. Isu,
    "Enhanced optical Kerr signal of GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers",
    Applied Physics Express 2, 082001 [3 pages] (2009).
    DOI:10.1143/APEX.2.082001
  55. T. Kitada, T. Kanbara, S. Yano, K. Morita, and T. Isu,
    "Marked enhancement of optical Kerr signal in proportion to fourth power of quality factor of a GaAs/AlAs multilayer cavity",
    Japanese Journal of Applied Physics 48, 080203 [3 pages] (2009).
    DOI:10.1143/JJAP.48.080203
  56. T. Kitada, T. Mukai, T. Takahashi, K. Morita, and T. Isu,
    "Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers for ultrafast nonlinear optical switching applications",
    Journal of Crystal Growth 311, 1807-1810 (2009).
    DOI:10.1016/j.jcrysgro.2008.10.049
  57. K. Morita, T. Kanbara, S. Yano, T. Kitada, and T. Isu,
    "Optical Kerr signals of GaAs/AlAs multilayer cavities for a short pulse",
    Physica Status Solidi (c) 6, 1420-1423 (2009).
    DOI:10.1002/pssc.200881522
  58. T. Takahashi, T. Mukai, K. Morita, T. Kitada, and T. Isu,
    "Photoluminescence properties of self-assembled InAs quantum dots grown on (001) and (113)B GaAs substrates by molecular beam epitaxy under a slow growth rate condition",
    Japanese Journal of Applied Physics 48, 04C128 [3 pages] (2009).
    DOI:10.1143/JJAP.48.04C128
  59. T. Kanbara, S. Nakano, S. Yano, K. Morita, T. Kitada, and T. Isu,
    "Enhanced two-photon absorption in a GaAs/AlAs multilayer cavity",
    Japanese Journal of Applied Physics 48, 04C105 [4 pages] (2009).
    DOI:10.1143/JJAP.48.04C105
  60. T. Mukai, T. Takahashi, K. Morita, T. Kitada, and T. Isu,
    "Excitation wavelength dependence of carrier relaxation in self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barrier layers",
    Japanese Journal of Applied Physics 48, 04C106 [4 pages] (2009).
    DOI:10.1143/JJAP.48.04C106
  61. K. Morita, T. Kanbara, S. Yano, T. Kitada, and T. Isu,
    "Asymmetric temporal profile of optical Kerr signal from GaAs/AlAs multilayer with λ/2 phase shift layer",
    Physica Status Solidi (c) 6, 137-140 (2009).
    DOI:10.1002/pssc.200879873
  62. T. Kitada, N. Niki, K. Morita, and T. Isu,
    "Optical anisotropy of (11n)-oriented InGaAs strained quantum wells with finite barrier potential calculated with mixing effects of the spin-orbit split-off band",
    Japanese Journal of Applied Physics 47, 7839-7841 (2008).
    DOI:10.1143/JJAP.47.7839
  63. T. Kitada, T. Kanbara, K. Morita, and T. Isu,
    "A GaAs/AlAs multilayer cavity with self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast all-optical switching applications",
    Applied Physics Express 1, 092302 [3 pages] (2008).
    DOI:10.1143/APEX.1.092302
  64. N. Niki, K. Morita, T. Kitada, and T. Isu,
    "Optical anisotropy of strained quantum wells on high index substrates",
    Physica Status Solidi (c) 5, 2756-2759 (2008).
    DOI:10.1002/pssc.200779225
  65. T. Kitada, S. Kusunoki, M. Kinouchi, K. Morita, T. Isu, and S. Shimomura,
    "Isotropic interface roughness of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy",
    Physica Status Solidi (c) 5, 2753-2755 (2008).
    DOI:10.1002/pssc.200779184
  66. I. Watanabe, K. Shinohara, T. Kitada, S. Shimomura, A. Endoh, Y. Yamashita, T. Mimura, S. Hiyamizu, and T. Matsui,
    "Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs fabricated on (411)A-oriented substrates by MBE",
    Journal of Crystal Growth 301-302, 1025-1029 (2007).
    DOI:10.1016/j.jcrysgro.2006.11.056
  67. T. Kitada, S. Shimomura, and S Hiyamizu,
    "Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on (n11)A GaAs substrates",
    Journal of Crystal Growth 301-302, 172-176 (2007).
    DOI:10.1016/j.jcrysgro.2006.11.170
  68. I. Watanabe, K. Shinohara, T. Kitada, S. Shimomura, A. Endoh, Y. Yamashita, T. Mimura, S. Hiyamizu, and T. Matsui,
    "Effects of heterointerface flatness on device performance of InP-based high electron mobility transistor",
    Japanese Journal of Applied Physics 46, 2325-2329 (2007).
    DOI:10.1143/JJAP.46.2325
  69. Y. Higuchi, S. Osaki, Y. Sasahata, T. Kitada, S. Shimomura, M. Ogura, and S. Hiyamizu,
    "830-nm polarization controlled lasing of InGaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy",
    Japanese Journal of Applied Physics 46, L138-L141 (2007).
    DOI:10.1143/JJAP.46.L138
  70. I. Watanabe, K. Shinohara, T. Kitada, S. Shimomura, Y. Yamashita, A. Endoh, T. Mimura, S. Hiyamizu, and T. Matsui,
    "Velocity enhancement in cryogenically cooled InP-based HEMTs on (411)A-oriented substrates",
    IEEE Transactions on Electron Devices 53, 2842-2846 (2006).
    DOI:10.1109/TED.2006.884065
  71. Y. Higuchi, S. Osaki, T. Kitada, S. Shimomura, Y. Tatsuoka, M. Ogura, and S. Hiyamizu,
    "Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy",
    Solid-State Electronics 50, 1137-1140 (2006).
    DOI:10.1016/j.sse.2006.04.040
  72. S. Shimomura, T. Toritsuka, A. Uenishi, T. Kitada, and S. Hiyamizu,
    "1.3 μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (221)A InP substrates by molecular beam epitaxy",
    Physica E 32, 346-349 (2006).
    DOI:10.1016/j.physe.2005.12.066
  73. K. Ohmori, H. Hino, T. Fujita, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Much improved self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy",
    Journal of Physics: Conference Series 38, 99-103 (2006).
    DOI:10.1088/1742-6596/38/1/025
  74. H. Hino, A. Shigenobu, K. Ohmori, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Pulse oscillation of self-organize In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 23, 2526-2529 (2005).
    DOI:10.1116/1.2126670
  75. I. Watanabe, K. Shinohara, T. Kitada, S. Shimomura, Y. Yamashita, A. Endoh, T. Mimura, T. Matsui, and S. Hiyamizu,
    "High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In0.75Ga0.25As/In0.52Al0.48As HEMT fabricated on (411)A-oriented InP substrate",
    IEEE Electron Device Letters 26, 425-428 (2005).
    DOI:10.1109/LED.2005.851234
  76. S. Katoh, H. Sagisaka, M. Yamamoto, I. Watanabe, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 23, 1154-1157 (2005).
    DOI:10.1116/1.1868713
  77. M. Imura, H. Kurohara, Y. Masui, T. Asano, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Much improved flat interfaces of InGaAs/AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy",
    Journal of Vacuum Science & Technology B 23, 1158-1161 (2005).
    DOI:10.1116/1.1914818
  78. T. Kitada, T. Aoki, I. Watanabe, S. Shimomura, and S. Hiyamizu,
    "Extremely high electron mobility of pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy",
    Applied Physics Letters 85, 4043-4045 (2004).
    DOI:10.1063/1.1807023
  79. T. Kitada, D. Kawazoe, S. Shimomura, and S. Hiyamizu,
    "Photoreflectance characterization of GaAs/AlAs quantum wells with (411)A super-flat interfaces grown by molecular beam epitaxy",
    Physica E 21, 722-726 (2004).
    DOI:10.1016/j.physe.2003.11.113
  80. Y. Higuchi, M. Uemura, Y. Masui, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates",
    Journal of Crystal Growth 251, 80-84 (2003).
    DOI:10.1016/S0022-0248(02)02377-1
  81. I. Watanabe, K. Kanzaki, T. Kitada, M. Yamamoto, S. Shimomura, and S. Hiyamizu,
    "Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces",
    Journal of Crystal Growth 251, 90-95 (2003).
    DOI:10.1016/S0022-0248(02)02422-3
  82. T. Kitada, T. Aoki, I. Watanabe, K. Kanzaki, S. Shimomura, and S. Hiyamizu,
    "Single-particle relaxation times in a pseudomorphic In0.7Ga0.3As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces grown by MBE",
    Physica E 13, 657-662 (2002).
    DOI:10.1016/S1386-9477(02)00212-6
  83. I. Watanabe, T. Kitada, K. Kanzaki, D. Kawaura, M. Yamamoto, S. Shimomura, and S. Hiyamizu,
    "Extremely flat growth-interrupted InAlAs surface grown on a (411)A-oriented InP substrate by molecular beam epitaxy",
    Physica E 13, 1195-1199 (2002).
    DOI:10.1016/S1386-9477(02)00334-X
  84. Y. Tatsuoka, M. Uemura, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Dissociation of As4 molecules during molecular beam epitaxy of GaAsP on (n11)A and (n11)B GaAs substrates",
    Journal of Vacuum Science & Technology B 20, 282-285 (2002).
    DOI:10.1116/1.1445290
  85. Y. Ohno, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Large anisotropy of electron mobilities in laterally modulated two-dimensional systems grown on the (775)B-oriented GaAs substrates by molecular beam epitaxy",
    Japanese Journal of Applied Physics 40, L1058-L1060 (2001).
    DOI:10.1143/JJAP.40.L1058
  86. I. Watanabe, K. Kanzaki, T. Aoki, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In0.7Ga0.3As/In0.52Al0.48As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy",
    Journal of Vacuum Science & Technology B 19, 1515-1518 (2001).
    DOI:10.1116/1.1387454
  87. T. Kitada, K. Nii, T. Hiraoka, S. Shimomura, and S. Hiyamizu,
    "Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wells with (411)A super-flat interfaces grown by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 19, 1546-1549 (2001).
    DOI:10.1116/1.1388602
  88. T. Kitada, T. Aoki, I. Watanabe, S. Shimomura, and S. Hiyamizu,
    "Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE",
    Journal of Crystal Growth 227-228, 289-293 (2001).
    DOI:10.1016/S0022-0248(01)00707-2
  89. S. Shimomura, Y. Kitano, H. Kuge, T. Kitada, K. Nakajima, and S. Hiyamizu,
    "Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x = 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy",
    Journal of Crystal Growth 227-228, 72-76 (2001).
    DOI:10.1016/S0022-0248(01)00635-2
  90. Y. Tatsuoka, M. Uemura, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate",
    Journal of Crystal Growth 227-228, 266-270 (2001).
    DOI:10.1016/S0022-0248(01)00702-3
  91. M. Higashiwaki, T. Kitada, T. Aoki, S. Shimomura, Y. Yamashita, A. Endoh, K. Hikosaka, T. Mimura, T. Matsui, and S. Hiyamizu,
    "DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy",
    Japanese Journal of Applied Physics 39, L720-L722 (2000).
    DOI:10.1143/JJAP.39.L720
  92. Y. Tatsuoka, H. Kamimoto, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 18, 1549-1552 (2000).
    DOI:10.1116/1.591424
  93. H. Kamimoto, Y. Tatsuoka, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 18, 1572-1575 (2000).
    DOI:10.1116/1.591428
  94. Y. Kitano, R. Kuriyama, T. Kitada, S. Shimomura, S. Hiyamizu, Y. Nishijima, and H. Ishikawa,
    "In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 18, 1576-1578 (2000).
    DOI:10.1116/1.591429
  95. T. Kitada, Y. Tatsuoka, S. Shimomura, and S. Hiyamizu,
    "As4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates",
    Journal of Vacuum Science & Technology B 18, 1579-1582 (2000).
    DOI:10.1116/1.591430
  96. T. Aoki, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 18, 1598-1600 (2000).
    DOI:10.1116/1.591435
  97. T. Kitada, K. Nii, T. Hiraoka, S. Shimomura, and S. Hiyamizu,
    "High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 17, 1482-1484 (1999).
    DOI:10.1116/1.590778
  98. Y. Tatsuoka, H. Kamimoto, Y. Kitano, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 17, 1155-1157 (1999).
    DOI:10.1116/1.590713
  99. K. Nii, R. Kuriyama, T. Hiraoka, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Larger critical thickness determined by photoluminescence measurements in pseudomorphic In0.25Ga0.75As/Al0.32Ga0.68As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 17, 1167-1170 (1999).
    DOI:10.1116/1.590716
  100. T. Kitada, M. Ohashi, S. Shimomura, and S. Hiyamizu,
    "High-quality InGaAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy",
    Japanese Journal of Applied Physics 38, 1888-1891 (1999).
    DOI:10.1143/JJAP.38.1888
  101. S. Hiyamizu, S. Shimomura, and T. Kitada,
    "Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy",
    Microelectronics Journal 30, 379-385 (1999).
    DOI:10.1016/S0026-2692(98)00139-6
  102. T. Kitada, T. Saeki, M. Ohashi, S. Shimomura, A. Adachi, Y. Okamoto, N. Sano, and S. Hiyamizu,
    "Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.52As quantum wells grown on (411)A InP substrates by molecular beam epitaxy",
    Journal of Electronic Materials 27, 1043-1046 (1998).
    DOI:10.1007/s11664-998-0161-9
  103. M. Ohashi, T. Saeki, T. Kitada, S. Shimomura, Y. Okamoto, and S. Hiyamizu,
    "Super-flat interfaces in pseudomorphic InxGa1-xAs/Al0.28Ga0.72As quantum wells with high In content (x = 0.15) grown on (411)A GaAs substrates by molecular beam epitaxy",
    Japanese Journal of Applied Physics 37, 4515-4517 (1998).
    DOI:10.1143/JJAP.37.4515
  104. T. Kitada, T. Saeki, M. Ohashi, S. Shimomura, and S. Hiyamizu,
    "Extremely uniform In0.08Ga0.92As/GaAs superlattice grown on a (411)A GaAs substrate by molecular beam epitaxy",
    Solid-State Electronics 42, 1575-1579 (1998).
    DOI:10.1016/S0038-1101(98)00074-4
  105. T. Saeki, T. Motokawa, T. Kitada, S. Shimomura, A. Adachi, Y. Okamoto, N. Sano, and S. Hiyamizu,
    "Extremely flat interfaces in InxGa1-xAs/Al0.3Ga0.7As quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy",
    Japanese Journal of Applied Physics 36, 1786-1788 (1997).
    DOI:10.1143/JJAP.36.1786
  106. S. Hiyamizu, T. Saeki, T. Motokawa, S. Shimomura, T. Kitada, A. Adachi, Y. Okamoto, T. Kusunoki, K. Nakajima, and N. Sano,
    "Extremely flat interfaces in In0.04Ga0.96As/Al0.3Ga0.7As quantum wells grown on (411)A In0.04Ga0.96As substrates by MBE",
    Superlattices and Microstructures 21, 107-111 (1997).
    DOI:10.1006/spmi.1996.0179
  107. S. Shimomura, K. Shinohara, T. Kitada, S. Hiyamizu, Y. Tsuda, N. Sano, A. Adachi, and Y. Okamoto,
    "Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy",
    Journal of Vacuum Science & Technology B 13, 696-698 (1995).
    DOI:10.1116/1.588138
  108. T. Kitada, A. Wakejima, N. Tomita, S. Shimomura, A. Adachi, N. Sano, and S. Hiyamizu,
    "Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy",
    Journal of Crystal Growth 150, 487-491 (1995).
    DOI:10.1016/0022-0248(95)80259-F
  109. A. Wakejima, A. Inoue, T. Kitada, N. Tomita, S. Shimomura, S. Hiyamizu, M. Fujii, T. Yamamoto, K. Kobayashi, and N. Sano,
    "Lateral variation of indium content in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy",
    Journal of Vacuum Science & Technology B 12, 1102-1105 (1994).
    DOI:10.1116/1.587098



解説・総説

  1. 解説: “高指数面上の副格子交換エピタキシーと面型非線形光デバイス”
    北田貴弘, 盧翔孟, 南康夫, 熊谷直人, 森田健
    材料 Vol. 68, No. 10 739-744 (2019).
  2. 解説: “半導体結合共振器による面発光テラヘルツ素子”
    北田貴弘, 南康夫, 盧翔孟, 熊谷直人, 森田健
    光学 Vol. 48, No. 7, 274-280 (2019).
  3. 解説: “MBEによる高指数へテロ界面の形成と素子応用”
    冷水佐壽, 下村哲, 北田貴弘
    応用物理 Vol. 72, No. 3, 291-297 (2003).



国際会議講演

  1. Y. Minami, X. M. Lu, N. Kumagai, K. Morita, and T. Kitada,
    "Time resolved measurement of two-color laser lights emitted from a GaAs/AlGaAs coupled multilayer cavity",
    23rd Microoptics Conference (MOC 2018), Taipei, Taiwan, H-4 (2018.10).
  2. X. M. Lu, Y. Minami, and T. Kitada,
    "Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates",
    20th International Conference on Molecular Beam Epitaxy (ICMBE 2018), Shanghai, China, Th-C4-1 (2018.9).
  3. X. M. Lu, Y. Minami, N. Kumagai, K. Morita, and T. Kitada,
    "Temperature tuning of two-color lasing using a coupled GaAs/AlGaAs multilayer cavity by current injection",
    The Compound Semiconductor Week 2018 (CSW2018), Massachusetts Institute of Technology, Cambridge, MA, USA, We2A2.4 (2018.5).
  4. Y. Minami, X. M. Lu, N. Kumagai, K. Morita, and T. Kitada,
    "Simultaneous oscillation of two-color laser lights from a GaAs/AlGaAs coupled multilayer cavity",
    The Conference on Lasers and Electro-Optics (CLEO 2018), San Jose, California, USA, JTu2A.20 (2018.5).
  5. T. Kitada, X. M. Lu, Y. Minami, N. Kumagai, and K. Morita,
    "Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding",
    2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, G-3-07 (2017.9).
  6. X. M. Lu, Y. Minami, N. Kumagai, and T. Kitada,
    "Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity",
    2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, G-3-02 (2017.9).
  7. K. Morita, H. Takaiwa, T. Kitada, and Y. Ishitani,
    "Influence of the above-barrier illumination on spin relaxation time of InGaAs/InAlAs multiple quantum wells",
    9th International School and Conference on Spintronics and Quantum Information Technology (SpinTECH), Fukuoka, B86 (2017.6).
  8. X. M. Lu, Y. Minami, and T. Kitada,
    "Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures grown by MBE",
    The 44rd International Symposium on Compound Semiconductor (ISCS2017), Berlin, Germany, B8.6 (2017.5).
  9. H. Ota, X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells",
    2016 Internatioal Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, E-6-01 (2016.9).
  10. X. M. Lu, H. Ota, N. Kumagai, T. Kitada, and T. Isu,
    "GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices",
    2016 Internatioal Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, C-4-03 (2016.9).
  11. H. Ota, X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Two-color surface emitting lasers by a GaAs-based coupled multilayer cavity structure for novel coherent terahertz light sources",
    19th International Conference on Molecular Beam Epitaxy (MBE2016), Montpelier, France, Tu-P-59 (2016.9).
  12. X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates",
    19th International Conference on Molecular Beam Epitaxy (MBE2016), Montpelier, France, Mo-P-64 (2016.9).
  13. H. Ota, X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Two-color lasing from a GaAs/AlGaAs coupled multilayer cavity by current injection",
    The 43rd International Symposium on Compound Semiconductor (ISCS2016), Toyama, MoP-ISCS-033 (2016.6).
  14. X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices",
    The 43rd International Symposium on Compound Semiconductor (ISCS2016), Toyama, MoP-ISCS-034 (2016.6).
  15. H. Ota, C. Harayama, T. Maekawa, X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Fabrication of two-color surface emitting device of a coupled cavity structure with InAs QDs formed by wafer-bonding",
    2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, A-7-6 (2015.9).
  16. K. Murakumo, Y. Yamaoka, N. Kumagai, T. Kitada, and T. Isu,
    "Photoconductivity with 1.55 µm excitation of InAs QDs embedded in InGaAs barriers on GaAs substrate",
    2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, PS-7-9 (2015.9).
  17. T. Kitada, M. Ogarane, T. Takamoto, N. Kumagai, X. M. Lu, K. Morita, and T. Isu,
    "Enhancement of terahertz emission from GaAs/AlAs coupled multilayer cavities by InAs quantum dots on (113)B-oriented substrates",
    The Second International Symposium on Frontiers in THz Technology (FTT2015), Hamamatsu, Pos1.24 (2015.8).
  18. X. M. Lu, A. Kawaguchi, N. Kumagai, T. Kitada, and T. Isu,
    "Investigation of carriers thermal transfer in self-assembled quantum dots grown on (311)B GaAs by temperature dependence photoluminescence",
    17th International Conference on Modulated Semiconductor Structures (MSS17), Sendai, Th-PM-13 (2015.7).
  19. N. Kumagai, K. Murakumo, T. Kitada, and T. Isu,
    "Mobility of in-plane photocurrent of stacked InAs QDs layers in strain-relaxed InGaAs matrix",
    17th International Conference on Modulated Semiconductor Structures(MSS17), Sendai, Mo-PM-14 (2015.7).
  20. K. Murakumo, N. Kumagai, T. Kitada, and T. Isu,
    "In-plane photoconductivity of InAs QDs embedded in strain-relaxed InGaAs layer",
    The 42th International Symposium on Compound Semiconductors (ISCS2015), Santa Barbara, CA, USA, Mo3GN1.2 (2015.6).
  21. X. M. Lu, A. Kawaguchi, N. Kumagai, T. Kitada and T. Isu,
    "Temperature dependence photoluminescence from InAs quantum dots with AlAs cap grown on (311)B and (100) GaAs substrate",
    The 42th International Symposium on Compound Semiconductors (ISCS2015), Santa Barbara, CA ,USA, Mo3GN1.5 (2015.6).
  22. M. Ogarane, Y. Yasunaga, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "GaAs/AlAs triple-coupled cavity with InAs quantum dots for an ultrafast wavelength conversion device via the four-wave-mixing",
    2014 International Conference on Solid State Devices and Materials (SSDM2014), Tsukuba, PS-7-7 (2014.9).
  23. C. Harayama, S. Katoh, Y. Nakagawa, X. M. Lu, N. Kumagai, T. Kitada, and T. Isu,
    "Effect of cavity-layer thicknesses on two-color lasing in a coupled multilayer cavity with InAs quantum dots",
    2014 International Conference on Solid State Devices and Materials (SSDM2014), Tsukuba, B-3-3 (2014.9).
  24. M. Ogarane, S. Katoh, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "Terahertz emission from a coupled multilayer cavity with InAs quantum dots",
    The 18th International Conference on Molecular Beam Epitaxy (MBE2014), Flagstaff, Arizona, TuA2-2 (2014.9).
  25. X. M. Lu, S. Matsubara, Y. Nakagawa, T. Kitada, and T. Isu,
    "Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (113)B GaAs with AlAs cap",
    The 18th International Conference on Molecular Beam Epitaxy (MBE2014), Flagstaff, Arizona, TuA2-5 (2014.9).
  26. X. M. Lu, S. Matsubara, T. Kitada, and T. Isu,
    "Enhanced photoluminescence form InAs quantum dots with a thin AlAs cap layer grown on (100) and (311)B GaAs substrate",
    The 41th International Symposium on Compound Semiconductors (ISCS2014), Montpellier, France, Tu-B3-4 (2014.5).
  27. C. Harayama, S. Katoh, Y. Nakagawa, T. Kitada, and T. Isu,
    "Effect of non-equivalent cavities on two-color lasing in a GaAs/AlAs coulpled multilayer cavity with InAs quantum dots",
    The 41th International Symposium on Compound Semiconductors (ISCS2014), Montpellier, France, P57 (2014.5).
  28. C. Harayama, S. Katoh, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "GaAs/AlAs coupled multilayer cavity by wafer-bonding for two-color emission devices",
    2013 International Conference on Solid State Devices and Materials (SSDM2013), Fukuoka, K-4-4 (2013.9).
  29. T. Kitada, Y. Yasunaga, Y. Nakagawa, K. Morita, and T. Isu,
    "Four-wave mixing in a GaAs/AlAs triple-coupled multilayer cavity for novel ultrafast wavelength conversion devices",
    2013 International Conference on Solid State Devices and Materials (SSDM2013), Fukuoka, K-5-3 (2013.9).
  30. H. Katayama, J. Murooka, R. Sato, M. Kimata, T. Kitada, T. Isu, M. Patrashin, and I. Hosako,
    "Development of type II superlattice detector for future space applications in JAXA",
    CLEO-PR & OECC/PS 2013, Kyoto International Conference Center, Kyoto, TuC1-3 (2013.6).
  31. T. Kitada, C. Harayama, K. Morita, and T. Isu,
    "Two-color lasing in a coupled multilayer cavity with InAs quantum dots by optical pumping",
    The 40th International Symposium on Compound Semiconductors (ISCS2013), Kobe Convention Center, Kobe, TuC1-5 (2013.5).
  32. T. Kitada, K. Morita, and T. Isu,
    "Molecular beam epitaxy of InAs quantum dots embedded in strain-relaxed barriers for ultrafast nonlinear optical devices",
    Collaborative Conference on Crystal Growth (3CG), Orland, Florida, USA, A7 (2012.12).
  33. T. Kitada, K. Morita, and T. Isu,
    "Novel semiconductor quantum dots for ultrafast nonlinear optical devices",
    International Conference on Emerging Advanced Nanomaterials (ICEAN2012), Brisbane, Australia, 4C-IL-6 (2012.10).
  34. Y. Yasunaga, H. Ueyama, K. Morita, T. Kitada, and T. Isu,
    "Four-wave mixing signal measurements of GaAs/AlAs multilayer cavity with InAs QDs embedded in strain-relaxed barriers",
    International Conference on Emerging Advanced Nanomaterials (ICEAN2012), Brisbane, Australia, P2-105 (2012.10).
  35. S. Katoh, Y. Yasunaga, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "InAs QDs embedded in strain-relaxed InGaAs barriers on (113)B GaAs substrates",
    International Conference on Emerging Advanced Nanomaterials (ICEAN2012), Brisbane, Australia, P2-084 (2012.10).
  36. K. Morita, H. Ueyama, Y. Yasunaga, Y. Nakagawa, T. Kitada, and T. Isu,
    "GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast alloptical switches",
    2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, A-6-4 (2012.9).
  37. H. Komatsu, Z. Zhang, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "A GaAs/Air multilayer cavity for a planar-type non-linear optical device",
    2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, PS-7-19 (2012.9).
  38. Y. Yasunaga, H. Ueyama, K. Morita, T. Kitada, and T. Isu,
    "Strongly enhanced four-wave mixing signal from GaAs/AlAs cavity with InAs QDs embedded in strain-relaxed barriers",
    2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, A-3-2 (2012.9).
  39. T. Kitada, H. Ueyama, K. Morita, and T. Isu,
    "Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers",
    The 17th International Conference on Molecular Beam Epitaxy (MBE 2012), Nara, TuP-53 (2012.9).
  40. K. Morita, S. Katoh, Y. Nakagawa, T. Kitada, and T. Isu,
    "Terahertz radiation using a GaAs/AlAs coupled multilayer cavity",
    The 10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials (EXCON2012), Groningen, Netherlands, P073 (2012.7).
  41. H. Ueyama, T. Takahashi, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "A GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers for ultrafast all-optical switches",
    2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, I-5-1 (2011.9).
  42. S. Katoh, T. Takimoto, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu,
    "Terahertz radiation from a (113)B GaAs/AlAs coupled multilayer cavity by ultrashort laser pulse excitation",
    2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, I-4-2 (2011.9).
  43. T. Ito, M. Deki, T. Tomita, S. Matsuo, S. Hashimoto, T. Kitada, T. Isu, S. Onoda, and T. Oshima,
    "Electrical conduction properties of SiC modified by femtosecond laser",
    The 12th International Symposium on Laser Precision Microfabrication (LPM2011), Takamatsu, (2011.6).
  44. K. Morita, T. Takimoto, S. Katoh, F. Tanaka, Y. Nakagawa, T. Kitada, and T. Isu,
    "GaAs/AlAs coupled multilayer cavity with polarization inverted structure fabricated by wafer-bonding method",
    The 38th International Symposium on Compound Semiconductors (ISCS2011), Berlin, Germany, P4.102 (2011.5).
  45. T. Kitada, F. Tanaka, T. Takahashi, K. Morita, and T. Isu,
    "Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates",
    SPIE Photonics West 2011, San Francisco, CA, USA, OPTO7937-52 (2011.1).
  46. M. Deki, T. Ito, T. Tomita, S. Matsuo, S. Hashimoto, T. Kitada, T. Isu, S. Onoda, and T. Oshima,
    "Laser modification aiming at the enhancement of local electrical conductivities in SiC",
    The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), Takasaki, pp.218-221 (2010.10).
  47. F. Tanaka, T. Takimoto, K. Morita, T. Kitada, and T. Isu,
    "Time-resolved measurements on sum frequency generation strongly enhanced in (113)B GaAs/AlAs coupled multilayer cavity",
    2010 International Conference on Solid State Devices and Materials (SSDM2010), Tokyo, D-2-1, pp.61-62 (2010.9).
  48. K. Morita, T. Takahashi, T. Kitada, and T. Isu,
    "Remarkable enhancement of optical Kerr signal by increasing quality factor in a GaAs/AlAs multilayer cavity",
    2010 International Conference on Solid State Devices and Materials (SSDM2010), Tokyo, D-1-4, pp.59-60 (2010.9).
  49. T. Kitada, T. Takahashi, K. Morita, and T. Isu,
    "Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers",
    16th International Conference on Molecular Beam Epitaxy (MBE2010), bcc Berlin Congress Center, Berlin, Germany, p1.20 (2010.8).
  50. M. Deki, M. Yamamoto, T. Ito, T. Tomita, S. Matsuo, S. Hashimoto, T. Kitada, T. Isu, S. Onoda, and T. Ohshima,
    "Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC",
    30th International Conference on the Physics of Semiconductors (ICPS2010), COEX, Seoul, Korea, (2010.7).
  51. T. Isu, F. Tanaka, T. Takahashi, T. Takimoto, K. Morita, and T. Kitada,
    "Frequency-mixing-signal generation on a GaAs/AlAs coupled multilayer-cavity",
    9th International Conference on Excitonic and Photonic Processws in Condensed and Nano Materials (EXCON'10), Novotel Hotel, Brisbane, Australia, 13002 (2010.7).
  52. K. Morita, F. Tanaka, T. Takahashi, T. Kitada, and T. Isu,
    "Optical anisotropy of enhanced sum-frequency generation signal in (113)B GaAs/AlAs coupled multilayer cavity",
    The 37th International Symposium on Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, FrP18, p.379 (2010.5).
  53. T. Kitada, A. Mukaijo, T. Takahashi, T. Mukai, K. Morita, and T. Isu,
    "Excitation wavelength dependence of photocarrier relaxation in Si-doped InAs quantum dots with strain-relaxed InGaAs barriers",
    The 37th International Symposium on Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, FrP15, p.377 (2010.5).
  54. K. Morita, T. Takahashi, T. Kitada, and T. Isu,
    "Strong optical Kerr gate signal in InAs-dot-buried GaAs/AlAs multilayer cavity using a picosecond laser pulse",
    The 6th International Conference on Quantum Dots (QD2010), East Midlands Conference Centre, Nottingham, UK, p.57 (2010.4).
  55. F. Tanaka, T. Takahashi, K. Morita, T. Kitada, and T. Isu,
    "Strong sum frequency generation in a GaAs/AlAs coupled multilayer cavity grown on a (113)B-oriented GaAs substrate",
    2009 International Conference on Solid State Devices and Materials (SSDM2009), Sendai, I-9-2 (2009.10).
  56. T. Takahashi, T. Mukai, K. Morita, T. Kitada, and T. Isu,
    "A GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers for planar-type optical Kerr gate switches",
    2009 International Conference on Solid State Devices and Materials (SSDM2009), Sendai, I-6-5 (2009.10).
  57. K. Morita, N. Niki, T. Kitada, and T. Isu,
    "Optical anisotropy of two-photon absorption in GaAs/AlGaAs quantum wells measured by photoluminescence",
    The 36th International Symposium on Compound Semiconductors (ISCS2009), University of California, Santa Barbara, USA, p1.13, p.119 (2009.8).
  58. T. Isu, T. Kanbarai, T. Takahashi, K. Morita, and T. Kitada,
    "Optical Kerr signals of GaAs/AlAs multilayer cavities with two-photon resonant quantum wells in the half-wavelength layer",
    The 36th International Symposium on Compound Semiconductors (ISCS2009), University of California, Santa Barbara, USA, p1.15, p.123 (2009.8).
  59. T. Isu, T. Takahashi, T. Kanbara, T. Mukai, K. Morita, and T. Kitada,
    "Optical Kerr signals of a GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed InGaAs layers",
    Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemicoNano 2009) Anan, Tokushima, O-12 (2009.8).
  60. T. Takahashi, T. Kanbara, T. Mukai, K. Morita, T. Kitada, and T. Isu,
    "Molecular beam epitaxy of InAs quantum dots embedded in strain-relaxed InGaAs layers",
    Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemicoNano 2009) Anan, Tokushima, P-19 (2009.8).
  61. S. Shimomura, N. Mouri, T. Matsugi, Y. Sasahata, and T. Kitada,
    "Evolution of surface corrugation during growth of self-assembled InGaAs quantum wires on (775)B InP substrates by molecular beam epitaxy",
    Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemicoNano 2009) Anan, Tokushima, (2009.8).
  62. K. Morita, T. Takahashi, T. Kanbara, S. Yano, T. Mukai, T. Kitada, and T. Isu,
    "Large optical Kerr signal of GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers",
    The 14th International Conference on Modulated Semiconductor Structures (MSS-14) Kobe International Conference Center, Mo-mP59, p.71 (2009.7).
  63. T. Kitada, A. Mukaijo, T. Takahashi, T. Mukai, K. Morita, and T. Isu,
    "Doping effect on photocarrier lifetime in InAs quantum dots with strain-relaxed InGaAs barriers grown by molecular beam epitaxy",
    The 14th International Conference on Modulated Semiconductor Structures (MSS-14) Kobe International Conference Center, Mo-mP54, p.66 (2009.7).
  64. S. Shimomura, T. Fujita, S. Imadu, and T. Kitada,
    "Anisotropic modal gain spectra of GaAs self-assembled quantum-wire laser structures on (775)B GaAs substrates",
    The 14th International Conference on Modulated Semiconductor Structures (MSS-14) Kobe International Conference Center, Tu-mP27, p.141 (2009.7).
  65. K. Morita, T. Kanbara, S. Yano, T. Kitada, and T. Isu,
    "Optical Kerr signals of GaAs/AlAs multilayer cavities for a short pulse",
    35th International Symposium on Compound Semiconductors (ISCS 2008) Euro-Park, Rust, Germany, P35 (2008.9).
  66. T. Takahashi, .T Mukai, K. Morita, T. Kitada, and T. Isu,
    "Molecular beam epitaxy of self-assembled InAs quantum dots on (001) and (113)B GaAs substrates under a slow growth rate condition",
    2008 International Conference on Solid State Devices and Materials (SSDM 2008) Tsukuba, F-5-2 (2008.9).
  67. T. Kanbara, S. Nakano, S. Yano, K. Morita, T. Kitada, and T. Isu,
    "Enhanced two-photon absorption in a GaAs/AlAs multilayer cavity",
    2008 International Conference on Solid State Devices and Materials (SSDM 2008) Tsukuba, E-2-5 (2008.9).
  68. T. Mukai, T. Takahashi, K. Morita, T. Kitada, and T. Isu,
    "Excitation wavelength dependence of carrier relaxation in self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barrier layers",
    2008 International Conference on Solid State Devices and Materials (SSDM 2008) Tsukuba, E-1-4 (2008.9).
  69. T. Kitada, T. Mukai, T. Takahashi, K. Morita, and T. Isu,
    "Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers for ultrafast nonlinear optical switching applications",
    15th International Conference on Molecular Beam Epitaxy (MBE 2008) University of British Columbia, Vancouver, Canada, 3-V FA1.6 (2008.8).
  70. K. Morita, T. Kanbara, S. Nakano, S. Yano, T. Kitada, and T. Isu,
    "Asymmetric temporal profile of optical Kerr signal from GaAs/AlAs multilayer with λ/2 phase shift layer",
    The 8th International Conference on Excitonic Processes in Condensed Matter (EXCON 2008) Kyoto University, OP-IV-03 (2008.6).
  71. T. Kitada, S. Kusunoki, M. Kinouchi. K. Morita, T. Isu, and S. Shimomura,
    "Isotropic interface roughness of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy",
    34th International Symposium on Compound Semiconductors (ISCS2007) Kyoto University, ThD P5, p.340 (2007.12).
  72. N. Niki, K. Morita, T. Kitada, and T. Isu,
    "Optical anisotropy of strained quantum wells on high index substrates",
    34th International Symposium on Compound Semiconductors (ISCS2007) Kyoto University, ThD P6, p.341 (2007.12).
  73. T. Fujita, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Gain spectra of self-organized GaAs/(GaAs)4(AlAs)2 quantum wire laser grown on (775)B GaAs substrates by molecular beam epitaxy",
    24th North American Conference on Molecular Beam Epitaxy (NAMBE 2006) Duke University, Durham, NC, USA, p.90 (2006.10).
  74. S. Osaki, Y. Higuchi, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Optical properties of GaAs/ (GaAs)4(AlAs)2 quantum wires grown on (775)B GaAs substrates by MBE",
    24th North American Conference on Molecular Beam Epitaxy (NANBE 2006) Duke University, Durham, NC, USA, p.89 (2006.10).
  75. S. Kusunoki, H. Sagisaka, T. Kitada, S. Shimomura, and S. Hiyamizu,
    "High Schottky AlAs barriers inserted into pseudomorphic InGaAs/InAlAs HEMT structures with (411)A super-flat interfaces grown by MBE",
    24th North American Conference on Molecular Beam Epitaxy (NAMBE 2006) Duke University, Durham, NC, USA, p.70 (2006.10).
  76. S. Shimomura, T. Toritsuka, K. Ohmori, A. Uenishi, T. Kitada, and S. Hiyamizu,
    "Room temperature operation of 1.2 µm range self-organized quantum wire lasers grown on a (221)A InP substrates by molecular beam epitaxy",
    14th International Conference on Molecular Beam Epitaxy (MBE 2006) Waseda University, Tokyo, p.327 (2006.9).
  77. I. Watanabe, K. Shinohara, T. Kitada, S. Shimomura, A. Endoh, Y. Yamashita, T. Mimura, S. Hiyamizu, and T. Matsui,
    "Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs fabricated on (411)A-oriented substrates by MBE",
    14th International Conference on Molecular Beam Epitaxy (MBE 2006) Waseda University, Tokyo, p.166 (2006.9).
  78. T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on (n11)A GaAs substrates",
    14th International Conference on Molecular Beam Epitaxy (MBE 2006) Waseda University, Tokyo, p.30 (2006.9).
  79. Y. Sasahara, S. Osaki, T. Fujita, A. Uenishi, T. Toritsuka, K. Ohmori, Y. Higuchi, K. Miyajima, T. Kitada, S. Shimomura, T. Itoh, and S. Hiyamizu,
    "Room temperature lasing action of vertical cavity surface emitting laser with self-organized InGaAs quantum wire grown on the (775)B InP substrates by molecular beam epitaxy",
    33rd International Symposium on Compound Semiconductors (ISCS 2006) The University of British Columbia, Vancouver, Canada, p.31 (2006.8).
  80. T. Kitada, I. Watanabe, M. Yamamoto, S. Katoh, H. Sagisaka, S. Shimomura, and S. Hiyamizu,
    "Characterization of interface roughness by magneto-PL of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation-doped quantum wells with high electron mobility grown on (411)A InP substrates by MBE",
    13th International Conference on Molecular Beam Epitaxy (MBE 2004) Edinburgh, Scotland, (2004.8).
  81. T. Kitada, S. Shimomura, and S. Hiyamizu,
    "Photoreflectance characterization of GaAs/AlAs quantum wells with (411)A super-flat interfaces grown by molecular beam epitaxy",
    11th International Conference on Modulated Semiconductor Structures (MSS 11) Nara, Japan, (2003.7).
  82. T. Kitada, T. Aoki, I. Watanabe, K. Kanzaki, S. Shimomura, and S. Hiyamizu,
    "Much enhanced electron mobility in a pseudomorphic In0.74Ga0.26As/In0.46Al0.54As QW-HEMT structure with (411)A super-flat interfaces grown by MBE",
    29th International Symposium on Compound Semiconductors (ISCS 2002), Lausanne, Switzerland, (2002.10).
  83. T. Kitada, T. Aoki, I. Watanabe, K. Kanzaki, S. Shimomura, and S. Hiyamizu,
    "Single-particle relaxation times in a pseudomorphic In0.7Ga0.3As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces grown by MBE",
    10th International Conference on Modulated Semiconductor structure (MSS10), Linz, Austria, (2001.7).
  84. T. Kitada, K. Nii, T. Hiraoka, S. Shimomura, and S. Hiyamizu,
    "Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wells with (411)A super-flat interfaces grown by molecular beam epitaxy",
    19th North American Conference on Molecular Beam Epitaxy (NAMBE 2000), Tempe, Arizona, USA, (2000.10).
  85. T. Kitada, T. Aoki, I. Watanabe, S. Shimomura, and S. Hiyamizu,
    "Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE",
    11th International Conference on Molecular Beam Epitaxy (MBE-XI), Beijing, China, (2000.9).
  86. T. Kitada, M. Ueno, T. Aoki, S. Shimomura, and S. Hiyamizu,
    "Enhancement of electron mobilities in pseudomorphic In0.7Ga0.3As/In0.52Al0.48As modulation-doped quantum wells with (411)A super-flat interfaces grown by molecular beam epitaxy",
    41st Electronic Materials Conference (EMC), Santa Barbara, USA, (1999.6).
  87. T. Kitada, T.Saeki, M. Ohashi, S. Shimomura, A. Adachi, Y. Okamoto, N. Sano, and S. Hiyamizu,
    "Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy",
    39th Electronic Materials Conference (EMC), Colorado, USA, (1997.6).
  88. T. Kitada, T. Saeki, M. Ohashi, S. Shimomura, and S. Hiyamizu,
    "Extremely uniform InGaAs/GaAs superlattice grown on a (411)A GaAs substrate by molecular beam epitaxy",
    International Workshop on Nano Physics and Electronics (NPE 97), Tokyo, (1997.9).
  89. T. Kitada, A. Wakejima, N. Tomita, S. Shimomura, A. Adachi, N. Sano, and S. Hiyamizu,
    "Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy",
    8th International Conference on Molecular Beam Epitaxy (MBE-8), Osaka, (1994.8).



学会発表論文

  1. 盧翔孟, 南康夫, 熊谷直人, 森田健, 北田貴弘
    “ウエハ接合で作製したGaAs/AlGaAs多層膜結合共振器への電流注入による室温二波長レーザ発振”
    電子情報通信学会術研究報告, Vol. 117, No. 406, OPE2017-118, pp. 9-14, 2018年1月.
  2. 北田貴弘, 南康夫, 盧翔孟
    “半導体多層薄膜を使った結合共振器構造による テラヘルツ発光素子”
    電子情報通信学会術研究報告, Vol. 116, No. 430, EID2016-33, pp. 33-36, 2017年1月.
  3. 太田寛人, 盧翔孟, 熊谷直人, 北田貴弘, 井須俊郎
    “テラヘルツ帯差周波発生に適した結合共振器による二波長面発光レーザの作製”
    電子情報通信学会術研究報告, Vol. 116, No. 52, LQE2016-15, pp. 67-72, 2016年5月.
  4. 原山千穂, 盧翔孟, 熊谷直人, 北田貴弘, 井須俊郎
    “結合共振器構造による二波長面発光とテラヘルツ波発光素子”
    電子情報通信学会術研究報告, Vol. 114, No. 432, LQE2014-178, pp. 245-250, 2015年1月.
  5. 北田貴弘, 原山千穂, 盧翔孟, 熊谷直人, 井須俊郎
    “二波長面発光レーザーによるテラヘルツ波発生”
    レーザー学会第472回研究会 新レーザ技術, No. RTM-14-84, pp. 35-39, 2014年12月.
  6. 森田健, 北田貴弘, 井須俊郎
    “半導体多層膜結合共振器によるテラヘルツ光発生”
    電子情報通信学会術研究報告, Vol. 112, No. 364, EID2012-96, pp. 17-22, 2012年12月.
  7. 北田貴弘, 高橋朋也, 森田健, 井須俊郎
    “歪緩和バリア層に埋め込んだInAs量子ドットをもつGaAs/AlAs多層膜光共振器による面型全光スイッチ”
    電子情報通信学会術研究報告, Vol. 109, No. 402, OPE2009-189, pp. 85-88, 2010年1月.



招待講演

  1. 森田健, 盧翔孟, 南康夫, 熊谷直人, 北田貴弘, 井須俊郎
    “半導体結合共振器を利用したテラヘルツ波発生”
    テラヘルツ科学の最先端V, Inv5, 2018年12月.
  2. 北田貴弘, 盧翔孟, 南康夫, 熊谷直人, 森田健
    “半導体結合共振器による赤外二波長レーザー発振”
    2018年電子情報通信学会ソサイエティ大会, C-4-19, 2018年9月.
  3. 北田貴弘, 盧翔孟, 南康夫, 熊谷直人, 森田健
    “高指数面上の副格子交換エピタキシーと面発光テラヘルツ素子”
    第78回応用物理学会秋季学術講演会, 8p-A203-1, 2017年9月.
  4. 北田貴弘, 南康夫, 盧翔孟
    “半導体多層薄膜を使った結合共振器構造によるテラヘルツ発光素子”
    発光型/非発光型ディスプレイ合同研究会, EID2016-33, 2017年1月.
  5. 井須俊郎, 太田寛人, 原山千穂, 盧翔孟, 熊谷直人, 北田貴弘
    “半導体多層薄膜結合共振器構造によるテラヘルツ発光素子”
    2015年電子情報通信学会ソサイエティ大会, CI-1-3, 2015年9月.
  6. 北田貴弘, 井須俊郎, 森田健
    “ウエハ接合による結合共振器の作製とテラヘルツ波発生素子への応用”
    電子情報通信学会 第5回集積光デバイスと応用技術研究会, 2014年12月.
  7. 井須俊郎, 北田貴弘, 森田健, 盧翔孟, 中河義典
    “半導体多層膜結合共振器構造の非線形光学応答とそのデバイス応用”
    第9回量子ナノ材料セミナー, 2013年11月.
  8. 森田健, 北田貴弘, 井須俊郎
    “半導体多層膜結合共振器によるテラヘルツ光発生”
    電子情報通信学会電子デバイス研究会, ED2012-96, 2012年12月.
  9. T. Kitada, K. Morita and T. Isu,
    "Molecular Beam Epitaxy of InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast Nonlinear Optical Devices",
    Collaborative Conference on Crystal Growth (3CG), A7, Orland, Florida, USA, Dec. 2012.
  10. T. Kitada, K. Morita and T. Isu,
    "Novel semiconductor quantum dots for ultrafast nonlinear optical devices",
    International Conference on Emerging Advanced Nanomaterials (ICEAN2012), 4C-IL-6, Brisbane,Austraria, Oct. 2012.
  11. 井須俊郎, 北田貴弘, 森田健
    “半導体多層膜結合共振器構造によるテラヘルツ波発生”
    第7回宇宙用高感度赤外センサ研究会, 2012年2月.
  12. 井須俊郎, 北田貴弘, 森田健, 中河義典
    “GaAs/AlAs多層膜結合共振器構造によるテラヘルツ発光素子”
    (社)レ-ザー学会学術講演会第32回年次大会, F-431pIV01, 169頁, 2012年1月.
  13. 井須俊郎, 北田貴弘, 森田健
    “半導体多層膜結合共振器構造によるテラヘルツ波発生素子”
    学振第182委員会第11回研究会 (テラヘルツ波科学技術と産業開拓委員会), 2011年10月.
  14. T. Kitada, F. Tanaka, T. Takahashi, K. Morita and T. Isu,
    "Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates",
    SPIE Photonics West2011, OPTO7937-52, The Moscone Center San Francisco, California, USA, Jan. 2011.
  15. 北田貴弘
    “歪超格子の高分解能X線回折によるキャラクタリゼーション”
    第４回宇宙用高感度赤外線センサ研究会, 情報通信研究機構, 東京, 2010年10月.
  16. 北田貴弘
    “InAs/GaSb系へテロ材料のMBE結晶成長技術”
    第１回宇宙用高感度赤外線センサ研究会, 京都, 2009年11月.
  17. S. Shimomura, N. Mouri, T. Matsugi, Y. Sasahata, T. Kitada,
    "Evolution of surface corrugation during growth of self-assembled InGaAs quantum wires on (775)B InP substrates by molecular beam epitaxy",
    Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemicoNano2009), O-12, Annan, Aug. 2009.
  18. T. Isu, T. Takahashi, T. Kanbara, T. Mukai, K. Morita and T. Kitada,
    "Optical Kerr Signals of a GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Layers",
    Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemicoNano2009), O-12, Annan, Aug. 2009.
  19. 北田貴弘
    “超高速光スイッチに向けたInAs量子ドットの分子線エピタキシャル成長”
    神戸大学VBL第２回ナノ・フォトニクス技術セミナー, 2009年5月.
  20. 北田貴弘, 森田健, 井須俊郎
    “面型超高速光スイッチに向けた半導体多層膜のMBE成長”
    応用物理学会中国四国支部研究会, 2007年12月.
  21. 井須俊郎, 向井拓也, 森田健, 北田貴弘, 赤羽浩一, 山本直克
    “InP(311)B上のInAs量子ドットの光学異方性”
    第3回量子ナノ材料セミナー, 2007年6月.
  22. 下村哲, 笹畑圭史, 大森和幸, 鳥塚哲郎, 上西敦士, 北田貴弘, 小倉睦郎, 冷水佐壽
    “自己形成型量子細線のMBE成長とレーザ・面発光レーザへの応用”
    第67回応用物理学会学術講演会, 2006年8月.



特許

  1. 発明の名称：　InGaAs/InAlAsヘテロ薄膜の成長方法
    特許出願番号：　特願平９－２６３６８６
    出願日：　1997年9月29日
    特許公開番号：　特開平１１－１０２８６５
    公開日: 　1999年4月13日
    発明者: 　冷水佐壽, 下村哲, 北田貴弘, 岡本恭典
    出願人: 　冷水佐壽, 下村哲, 北田貴弘, 株式会社クボタ



競争的外部資金

科学研究費補助金（代表）
  1. “副格子交換エピタキシーによるテラヘルツＬＥＤの研究”
    基盤研究（B）（課題番号１９Ｈ０２２００）（研究代表者）
    平成３１年度（２０１９年度）－令和２年度（２０２０年度）, 研究経費：１０，１００千円
  2. “テラヘルツＬＥＤの研究”
    基盤研究（B）（課題番号１６Ｈ０４３５１）（研究代表者）
    平成２８年度－平成３０年度, 研究経費：１２，８００千円
  3. “高指数面基板上の副格子交換エピタキシーによる半導体多層膜結合共振器の研究”
    挑戦的萌芽研究（課題番号１５Ｋ１３９５６）（研究代表者）
    平成２７年度－平成２８年度, 研究経費：３，０００千円
  4. “半導体結合共振器による面型テラヘルツ波発生素子の研究”
    基盤研究（B）（課題番号２２３６００３０）（研究代表者）
    平成２２年度－平成２５年度, 研究経費：１４，６００千円
  5. “光によるQ値可変を実現する半導体多層膜共振器の創製”
    挑戦的萌芽研究（課題番号２１６５６０８４）（研究代表者）
    平成２１年度－平成２２年度, 研究経費：３，２００千円
  6. “高ショットキー極薄バリア超高速トランジスタ材料の開発”
    若手研究（B）（課題番号１７７６０２５３）（研究代表者）
    平成１７年度－平成１８年度, 研究経費：３，３００千円
科学研究費補助金（分担）
  1. “量子ドット超格子を用いた光導電型テラヘルツ発生・検知デバイスの実現”
    基盤研究（C）（課題番号１９Ｋ０４５３２）（研究分担者）
    平成３１年度（２０１９年度）－令和３年度（２０２１年度）, 研究経費：３，４００千円
  2. “超高速キャリア緩和を有するInAs量子ドットのテラヘルツ波検出素子への応用”
    基盤研究（C）（課題番号１６Ｋ０６２６６）（研究分担者）
    平成２８年度－平成３０年度, 研究経費：３，８００千円
  3. “高強度テラヘルツパルスを利用した半導体中電子スピンの超高速自由制御”
    基盤研究（C）（課題番号２６３９００７４）（研究分担者）
    平成２６年度－平成２８年度, 研究経費：３，８００千円
  4. “量子ドットと半導体多層膜三結合共振器構造を用いた超高速波長変換素子”
    基盤研究（B）（課題番号２４３６００２８）（研究分担者）
    平成２４年度－平成２７年度, 研究経費：１４，５００千円
  5. “半導体多層膜結合共振器構造による二波長レーザ発振とテラヘルツ波発生の研究”
    挑戦的萌芽研究（課題番号２４６５６０５１）（研究分担者）
    平成２４年度－平成２５年度, 研究経費：３，１００千円
  6. “半導体多層膜結合光共振器による波長変換デバイス”
    挑戦的萌芽研究（課題番号２２６５６０１８）（研究分担者）
    平成２２年度－平成２３年度, 研究経費：３，１００千円
  7. “量子ドットを用いた面型多層膜半導体超高速光スイッチの研究”
    基盤研究（B）（課題番号２１３６００３５）（研究分担者）
    平成２１年度－平成２３年度, 研究経費：１４，２００千円
  8. “巨大伝導帯オフセットをもつ量子井戸材料の探索と量子構造の作製”
    基盤研究（C）（課題番号１７５６０２８３）（研究分担者）
    平成１７年度－平成１９年度, 研究経費：３，２００千円
  9. “超高圧下の精密な固体物性研究による圧力誘起量子転移機構の解明”
    基盤研究A（２）（課題番号１５２０４０３２）（研究分担者）
    平成１５年度－平成１８年度, 研究経費：３８，６００千円
  10. “長波長帯面発光量子細線レーザの作製”
    基盤研究A（２）（課題番号１５２０６０３４）（研究分担者）
    平成１５年度－平成１７年度, 研究経費：３６，７００千円
  11. “InGaAs面発光量子細線レーザの開発”
    基盤研究（A）（課題番号１２３５５０１５）（研究分担者）
    平成１２年度－平成１４年度, 研究経費：３６，７００千円
  12. “(775)B GaAs基板上の超高密度InGaAs/AlGaAs量子細線の研究”
    基盤研究（B）（課題番号０９４５０１３０）（研究分担者）
    平成９年度－平成１０年度, 研究経費：１３，８００千円
受託研究（代表）
  1. 平成２６年度 総務省戦略的情報通信研究開発事業（SCOPE）
    ICTイノベーション創出型研究開発・フェーズI
    「半導体多層膜結合共振器によるテラヘルツＬＥＤの研究開発」（研究代表者）
    研究経費：３，６５０千円
共同研究・受託研究（分担）
  1. 平成１７年１月－平成１８年３月　「HEMTヘテロ結晶の研究」（研究分担者）
海外派遣助成金
  1. 平成１１年度　財団法人丸文研究交流財団・国際交流助成金　１７０千円
  2. 平成１０年度　財団法人大阪大学後援会・海外派遣助成金　２２５千円